Hydrogen-doped viscoplastic liquid metal microparticles for stretchable printed metal lines.

Conductive and stretchable electrodes that can be printed directly on a stretchable substrate have drawn extensive attention for wearable electronics and electronic skins. Printable inks that contain liquid metal are strong candidates for these applications, but the insulating oxide skin that forms around the liquid metal particles limits their conductivity. This study reveals that hydrogen doping introduced by ultrasonication in the presence of aliphatic polymers makes the oxide skin highly conductive and deformable. X-ray photoelectron spectroscopy and atom probe tomography confirmed the hydrogen doping, and first-principles calculations were used to rationalize the obtained conductivity. The printed circuit lines show a metallic conductivity (25,000 S cm-1), excellent electromechanical decoupling at a 500% uniaxial stretching, mechanical resistance to scratches and long-term stability in wide ranges of temperature and humidity. The self-passivation of the printed lines allows the direct printing of three-dimensional circuit lines and double-layer planar coils that are used as stretchable inductive strain sensors.

Electroactive 1T-MoS2 Fluoroelastomer Ink for Intrinsically Stretchable Solid-State In-Plane Supercapacitors.

Full advantage of stretchable electronic devices can be taken when utilizing an intrinsically stretchable power source. High-performance stretchable supercapacitors with a simple structure and solid-state operation are good power sources for stretchable electronics. This study suggests a new type of intrinsically stretchable, printable, electroactive ink consisting of 1T-MoS2 and a fluoroelastomer (FE). The active material (1T-MoS2/FE) is made by fluorinating the metallic-phase MoS2 (1T-MoS2) nanosheets with the FE under high-power ultrasonication. The MoS2 in the 1T-MoS2/FE has unconventional crystal structures in which the stable cubic (1T) and distorted 2H structures were mixed. The printed line of the 1T-MoS2/FE on the porous stretchable Au collector electrodes is intrinsically stretchable at more than ε = 50% and has good specific capacitance (28 mF cm-2 at 0.2 mA cm-2) and energy density (3.15 mWh cm-3). The in-plane all-solid-state stretchable supercapacitor is stretchable at ε = 40% and retains its relative capacity (C/Co) by 80%. This printable device platform potentially opens up the in-plane fabrication of stretchable micro-supercapacitor devices for wearable electronic applications.

Surface Diffusion and Epitaxial Self-Planarization for Wafer-Scale Single-Grain Metal Chalcogenide Thin Films.

Although wafer-scale single-grain thin films of 2D metal chalcogenides (MCs) have been extensively sought after during the last decade, the grain size of the MC thin films is still limited in the sub-millimeter scale. A general strategy of synthesizing wafer-scale single-grain MC thin films by using commercial wafers (Si, Ge, GaAs) both as metal source and epitaxial collimator is presented. A new mechanism of single-grain thin-film formation, surface diffusion, and epitaxial self-planarization is proposed, where chalcogen elements migrate preferentially along substrate surface and the epitaxial crystal domains flow to form an atomically smooth thin film. Through synchrotron X-ray diffraction and high-resolution scanning transmission electron microscopy, the formation of single-grain Si2 Te3 , GeTe, GeSe, and GaTe thin films on (111) Si, Ge, and (100) GaAs is verified. The Si2 Te3 thin film is used to achieve transfer-free fabrication of a high-performance bipolar memristive electrical-switching device.

Fabrication of Foldable Metal Interconnections by Hybridizing with Amorphous Carbon Ultrathin Anisotropic Conductive Film.

With the advent of foldable electronics, it is necessary to develop a technology ensuring foldability when the circuit lines are placed on the topmost substrate rather than in the neutral plane used in the present industry. Considering the potential technological impacts, conversion of the conventional printed circuit boards to foldable ones is most desirable to achieve the topmost circuitry. This study realizes this unconventional conversion concept by coating an ultrathin anisotropic conductive film (UACF) on a printed metal circuit board. This study presents rapid large-area synthesis of hydrogenated amorphous carbon (a-C:H) thin films and their use as the UACF. Since the synthesized a-C:H thin film has electrical transparency, the metal/a-C:H hybrid board reflects the complexity of the underlying metal circuit board. The a-C:H thin film electrically connects the cracked area of the metal line; thus, the hybrid circuit board is foldable without resistance change during repeated folding cycles. The metal/UACF hybrid circuit board can be applied to the fabrication of various foldable electronic devices.

Gate-tunable photoresponse of defective graphene: from ultraviolet to visible.

We report the gate-tunable photoresponse of a defective graphene over the ultraviolet (UV) and the visible light illumination, where the defect was generated by plasma irradiation. Plasma induced Dirac point shift indicates the p-doping effect. Interestingly the defective-graphene field effect transistor (defective-GFET) showed a negative shift upon UV illumination, whereas the device showed a positive shift under visible light illumination, along with the change in the photocurrent. The defective-GFET device showed a high photoresponsivity of 37 mA W(-1) under visible light, that is ∼3 times higher than that of the pristine graphene device. Photoinduced molecular desorption causes the UV light responsivity to 18 mA W(-1). This study shows that the tunable photodetector with high responsivity is feasible by introducing an artificial defect on graphene surface.

Self-induced gate dielectric for graphene field-effect transistor.

We report the electronic characteristics of an avant-garde graphene-field-effect transistor (G-FETs) based on ZnO microwire as top-gate electrode with self-induced dielectric layer. Surface-adsorbed oxygen is wrapped up the ZnO microwire to provide high electrostatic gate-channel capacitance. This nonconventional device structure yields an on-current of 175 µA, on/off current ratio of 55, and a device mobility exceeding 1630 cm(2)/(V s) for holes and 1240 cm(2)/(V s) for electrons at room temperature. Self-induced gate dielectric process prevents G-FETs from impurity doping and defect formation in graphene lattice and facilitates the lithographic process. Performance degradation of G-FETs can be overcome by this avant-garde device structure.