Quantum dynamics origin of high photocatalytic activity of mixed-phase anatase/rutile TiO2.

Mixed anatase/rutile TiO2 exhibits high photocatalytic activity; however, the mechanism underlying the high performance of the mixed phases is not fully understood. We have performed time-domain ab initio calculations to study the exited state dynamics in mixed phase TiO2 and to investigate the impact of an oxygen vacancy on the dynamics. The anatase(100)/rutile(001) heterostructures with and without an oxygen vacancy used in this work exhibit type II band alignment with the conduction band of rutile residing above that of anatase. The oxygen vacancy introduces a hole trap state inside the bandgap. Owing to a strong coupling between the donor and acceptor states, the electron and hole transfers across the anatase/rutile interface occur on an ultrafast 100 fs timescale in both systems. The decoupling of electron and hole favors a long-lived charge separated state. The electron-hole recombination across the pristine anatase/rutile interface takes 6.6 ns and is significantly slower than that in the pure anatase and rutile phases, showing good agreement with experiments. The electron transfer dynamics is independent of the oxygen vacancy, which has some influence on the hole transfer and a strong effect on carrier recombination. By creating a hole trap state, the vacancy accelerates carrier losses by over an order of magnitude. The fast charge separation and the long lifetime of the charge separated state rationalize the enhanced photocatalytic performance of mixed phase TiO2 compared to the pure phases.

Influence of tungsten doping on nonradiative electron-hole recombination in monolayer MoSe2 with Se vacancies.

Two-dimensional transition metal dichalcogenides (TMDs) are receiving significant attention due to their excellent electronic and optoelectronic properties. The material quality is greatly affected by defects that are inevitably generated during material synthesis. Focusing on chalcogenide vacancies, which constitute the most common defect, we use the state-of-the-art simulation methodology developed in our group to demonstrate that W doping of MoSe2 with Se vacancies reduces charge carrier losses by two mechanisms. First, W doping makes the formation of double Se vacancies unfavorable, while it is favorable in undoped MoSe2. Second, if a Se vacancy is present, the charge carrier lifetimes are extended in the W-doped MoSe2. Combining ab initio real-time time-dependent density functional theory with nonadiabatic molecular dynamics, the simulations show that the nonradiative carrier losses in the presence of Se vacancies proceed by sub-10 ps electron trapping and relaxation down the manifold of trap states, followed by a 100 ps recombination of trapped electrons with free holes. The electron-vibrational energy exchange is driven by both in-plane and out-of-plane vibrational motions of the MoSe2 layer. The atomistic studies advance our understanding of the influence of defects on charge carrier properties in TMDs and guide improvements of material quality and development of TMD applications.

Thin Ti adhesion layer breaks bottleneck to hot hole relaxation in Au films.

Slow relaxation of highly excited (hot) charge carriers can be used to increase efficiencies of solar cells and related devices as it allows hot carriers to be extracted and utilized before they relax and lose energy. Using a combination of real-time density functional theory and nonadiabatic molecular dynamics, we demonstrate that nonradiative relaxation of excited holes in an Au film slows down 30-fold as holes relax across the energy range -2 to -1.5 eV below the Fermi level. This effect arises due to sharp decreases in density of states (DOS) and reduced hole-phonon coupling in this energy range. Furthermore, to improve adhesion, a thin film of transition metal, such as Ti, is often inserted between the noble metal layer and its underlying substrate; we demonstrate that this adhesion layer completely eliminates the hot-hole bottleneck because it significantly, 7-fold per atom, increases the DOS in the critical energy region between -1.5 eV and the Fermi level, and because Ti atoms are 4-times lighter than Au atoms, high frequency phonons are introduced and increase the charge-phonon coupling. The detailed ab initio analysis of the charge-phonon scattering emphasizes the nonequilibrium nature of the relaxation processes and provides important insights into the energy flow in metal films. The study suggests that energy losses to heat can be greatly reduced by judicious selection of adhesion layers that do not involve light atoms and have relatively low DOS in the relevant energy range. Inversely, narrow Ti adhesion layers assist heat dissipation needed in electronics applications.

Rapid Decoherence Suppresses Charge Recombination in Multi-Layer 2D Halide Perovskites: Time-Domain Ab Initio Analysis.

Two-dimensional (2D) Ruddlesden-Popper halide perovskites are appealing candidates for optoelectronics and photovoltaics. Nonradiative electron-hole recombination constitutes a major pathway for charge and energy losses in these materials. Surprisingly, experimental recombination is slower in multilayers than a monolayer, even though multilayer systems have smaller energy gaps and higher frequency phonons that should accelerate the recombination. Focusing on (BA)2(MA) n-1Pb nI3 n+1 with n = 1 and 3, BA = CH3(CH2)3NH3, and MA = CH3NH3, we show that it is the enhancement of elastic electron-phonon scattering that suppresses charge recombination for n = 3, by causing rapid loss of electronic coherence. The scattering is enhanced in the multilayer 2D perovskites because, in contrast to the monolayer, they contain MA cations embedded into the inorganic Pb-I lattice. Although MAs do not contribute directly to electron and hole wave functions, they perturb the Pb-I lattice and create strong electric fields that interact with the charges. The rapid loss of coherence explains long excited state lifetimes that extend into nanoseconds. Both electron-hole recombination and coherence times show excellent agreement with the corresponding lifetime and line width measurements. The simulations rationalize the observed dependence of excited state lifetime in 2D layered halide perovskites on layer thickness and advance our understanding of the atomistic mechanisms underlying charge-phonon dynamics in nanoscale materials.

Interplay between Localized and Free Charge Carriers Can Explain Hot Fluorescence in the CH3NH3PbBr3 Perovskite: Time-Domain Ab Initio Analysis.

Delayed high-energy fluorescence observed experimentally in methylammonium lead bromine CH3NH3PbBr3 (MAPbBr3) demonstrates long-lived energetic charge carriers with extremely high mobilities that can be used to enhance photon-to-electron conversion efficiency of perovskite solar cells. It has been suggested that hot fluorescence is associated with reorientational motions of the MA molecules. We support this hypothesis by time-domain ab initio quantum dynamics calculations showing that reorientation of the MA molecules can affect strongly the perovskite emission energy and lifetime. We demonstrate MAPbBr3 structures differing in the MA orientations and exhibiting the same emission properties as in the experiments. The higher bandgap structures responsible for hot fluorescence support delocalized wave functions that can be interpreted as free charge carriers. The lower energy structures exhibit localized polaron-like electrons and holes, and a significantly longer electron-hole recombination time, in agreement with experiment. The fluorescence lifetimes differ owing to variation in the nonadiabatic coupling between the emitting and ground states, stemming from charge carrier localization. Loss of coherence due to elastic electron-phonon scattering is similar in the two cases. The simulations provide a detailed atomistic understanding of excited-state dynamics in MAPbBr3 and show how structural transformations can rationalize the experimentally reported hot fluorescence in MAPbBr3. Other localized structures involving inorganic lattice distortions, defects, domain boundaries, ion diffusion, electric ordering, etc., can be invoked with the proposed two-emitter interpretation of hot and regular luminescence.

Electron-phonon relaxation at the Au/WSe2 interface is significantly accelerated by a Ti adhesion layer: time-domain ab initio analysis.

Thermal transport at nanoscale metal-semiconductor interfaces via electron-phonon coupling is crucial for applications of modern microelectronic, electro-optic and thermoelectric devices. To enhance the device performance, the heat flow can be regulated by modifying the interfacial atomic interactions. We use ab initio time-dependent density functional theory combined with non-adiabatic molecular dynamics to study how the hot electron and hole relaxation rates change on incorporating a thin Ti adhesion layer at the Au/WSe2 interface. The excited charge carrier relaxation is much faster in Au/Ti/WSe2 due to the enhanced electron-phonon coupling, rationalized by the following reasons: (1) Ti atoms are lighter than Au, W and Se atoms and move faster. (2) Ti has a significant contribution to the electronic properties in the relevant energy range. (3) Ti interacts strongly with WSe2 and promotes its bond-scissoring which causes Fermi-level pinning, making WSe2 contribute to electronic properties around the Fermi level. The changes in the relaxation rates are more pronounced for excited electrons compared to holes because both relative and absolute Ti contributions to the electronic properties are larger above than below the Fermi level. The results provide guidance for improving the design of novel and robust materials by optimizing the heat dissipation at metal-semiconductor interfaces.