RESUMO
Herein, the integration of SnO2 nanoparticles with two Zn(II) porphyrinsâZn(II) 5,10,15,20-tetraphenylporphyrin (ZnTPP) and its perfluorinated counterpart, Zn(II) 5,10,15,20-tetrakis(pentafluorophenyl)porphyrin (ZnTPPF20)âwas investigated for the sensing of gaseous acetone at 120 °C, adopting three Zn-porphyrin/SnO2 weight ratios (1:4, 1:32, and 1:64). For the first time, we were able to provide evidence of the correlation between the materials' conductivity and these nanocomposites' sensing performances, obtaining optimal results with a 1:32 ratio for ZnTPPF20/SnO2 and showcasing a remarkable detection limit of 200 ppb together with a boosted sensing signal with respect to bare SnO2. To delve deeper, the combination of experimental data with density functional theory calculations unveiled an electron-donating behavior of both porphyrins when interacting with tin dioxide semiconductor, especially for the nonfluorinated one. The study suggested that the interplay between electrons injected, from the porphyrins' highest occupied molecular orbital to SnO2 conduction band, and the latter's available electronic states has a dramatic impact to boost the chemiresistive sensing. Indeed, we highlighted that the key lies in preventing the full saturation of SnO2 electronic states concomitantly increasing the materials' conductivity: in this respect, the best compromise turned out to be the perfluorinated porphyrin. A further corroboration of our findings was obtained by illuminating the sensors during measurements with light-emitting diode (LED) light. Actually, we demonstrated that it does not have any impact on improving the sensing behavior, most probably due to the electronic oversaturation and scattering caused by LED excitation in porphyrins. Lastly, the most effective hybrids (1:32 ratio) were physicochemically characterized, confirming the physisorption of the macrocycles onto the SnO2 surface. In conclusion, herein, we underscore the feasibility of customizing the porphyrin chemistry and porphyrin-to-SnO2 ratio to enhance the gaseous sensing of bare metal oxides, providing valuable insights for the engineering of highly performing light-free chemiresistors.
RESUMO
Sensitivity and selectivity are the two major parameters that should be optimized in chemiresistive devices with boosted performances towards Volatile Organic Compounds (VOCs). Notwithstanding a plethora of metal oxides/VOCs combinations that have been investigated so far, a close inspection based on theoretical models to provide guidelines to enhance sensors features has been scarcely explored. In this work, we measured experimentally the sensor response of a WO3 chemiresistor towards gaseous acetone and toluene, observing a two orders of magnitude higher signal for the former. In order to gain insight on the observed selectivity, Density Functional Theory was then adopted to elucidate how acetone and toluene molecules adsorption may perturb the electronic structure of WO3 due to electrostatic interactions with the surface and hybridization with its electronic structure. The results of acetone adsorption suggest the activation of the carbonyl group for reactions, while an overall lower charge redistribution on the surface and the molecule was observed for toluene. This, combined with acetone's higher binding energy, justifies the difference in the final responses. Notably, the presence of surface oxygen vacancies, characterizing the nanostructure of the oxide, influences the sensing performances.
RESUMO
The magnetic properties of the Gd(12)O(18) cluster cut from the bulk Gd(2)O(3) crystal are investigated using the spin-polarized density functional theory within the broken-symmetry approach. Our work reveals that in the ground state of the cluster the antiferromagnetic coupling between adjacent Gd (4f(7)) spins is preferred energetically. This result is in contrast to a recent prediction made by Pedersen and Ojamae (Pedersen, H.; Ojamae, L. Nano Lett. 2006, 6, 2004) but is consistent with recent experimental observations. The optimized structures of the cluster in the lowest-energy broken-symmetry state and the highest-spin ferromagnetic state are almost identical. The latter state is 71.5 cm(-1) higher in energy than the former one, giving a value of about -0.24 cm(-1) for the magnetic coupling constant, which is comparable to that estimated from experiments on the bulk crystal. The relative energies of various 4f(7) spin patterns of the cluster are calculated, and certain characteristics of the cluster in the lowest-energy broken-symmetry state are discussed.
RESUMO
We report the electronic, magnetic and transport properties of a prototypical antiferromagnetic (AFM) spintronic device. We chose Cr as the active layer because it is the only room-temperature AFM elemental metal. We sandwiched Cr between two non-magnetic metals (Pt or Au) with large spin-orbit coupling. We also inserted a buffer layer of insulating MgO to mimic the structure and finite resistivity of a real device. We found that, while spin-orbit has a negligible effect on the current flowing through the device, the MgO layer plays a crucial role. Its effect is to decouple the Cr magnetic moment from Pt (or Au) and to develop an overall spin magnetization. We have also calculated the spin-polarized ballistic conductance of the device within the Büttikerâ»Landauer framework, and we have found that for small applied bias our Pt/Cr/MgO/Pt device presents a spin polarization of the current amounting to ≃25%.