RESUMO
The dielectric constant or relative permittivity (ε(r)) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured ε(r) increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.
RESUMO
Through a combined density functional theory and in situ scanning electron microscopy study, the effects of presence of gold (Au) spreading on the lithiation process of silicon nanowire (SiNW) were systematically examined. Different from a pristine SiNW, an Au-coated SiNW (Au-SiNW) is lithiated in three distinct stages; Li atoms are found to be incorporated preferentially in the Au shell, whereas the thin AuSi interface layer may serve as a facile diffusion path along the nanowire axial direction, followed by the prompt lithiation of the Si core in the radial direction. The underlying mechanism of the intriguing stagewise lithiation behavior is explained through our theoretical analysis, which appears well-aligned with the experimental evidence.