New PEDOT Derivatives Electrocoated on Silicon Nanowires Protected with ALD Nanometric Alumina for Ultrastable Microsupercapacitors.

This work deals with electroactive conducting polymers (ECPs) used as a complementary component on purely capacitive silicon nanowires protected by a 3 nm alumina layer. Accordingly, in this work, we use a fast and simple deposition method to create a pseudocapacitive material based on the electropolymerization in aqueous micellar media (SDS and SDBS 0.01 M) of hydroxymethyl-EDOT (EDOT-OH) onto 3 nm alumina-coated silicon nanowires (Al3@SiNWs). The composite material displays remarkable capacitive behavior with a specific capacitance of 4.75 mF·cm-2 at a current density of 19 µA·cm-2 in aqueous Na2SO4 electrolyte.

Atomic Layer Deposition Alumina-Passivated Silicon Nanowires: Probing the Transition from Electrochemical Double-Layer Capacitor to Electrolytic Capacitor.

Silicon nanowires were coated by a 1-5 nm thin alumina layer by atomic layer deposition (ALD) in order to replace poorly reproducible and unstable native silicon oxide by a highly conformal passivating alumina layer. The surface coating enabled probing the behavior of symmetric devices using such electrodes in the EMI-TFSI electrolyte, allowing us to attain a large cell voltage up to 6 V in ionic liquid, together with very high cyclability with less than 4% capacitance fade after 106 charge/discharge cycles. These results yielded fruitful insights into the transition between an electrochemical double-layer capacitor behavior and an electrolytic capacitor behavior. Ultimately, thin ALD dielectric coatings can be used to obtain hybrid devices exhibiting large cell voltage and excellent cycle life of dielectric capacitors, while retaining energy and power densities close to the ones displayed by supercapacitors.