RESUMO
The controlled confinement of the metallic delta-layer to a single atomic plane has so far remained an unsolved problem. In the present study, the delta-type structure with atomic sheet of NiSi2 silicide embedded into a crystalline Si matrix has been fabricated using room-temperature overgrowth of a Si film onto the Tl/NiSi2/Si(111) atomic sandwich in ultrahigh vacuum. Tl atoms segregate at the growing Si film surface, and the 1.5-3.0 nm thick epitaxially crystalline Si layer forms atop the NiSi2 sheet. Confinement of the NiSi2 layer to a single atomic plane has been directly confirmed by transmission electron microscopy. The NiSi2 delta-layer demonstrates a p-type conductivity associated with the electronic transport through the two hole-like and one electron-like interface-state bands. The basic structural and electronic properties of the NiSi2 delta-layer remain after keeping the sample in air for one year.