Enhancement of faradaic current in an electrochemical cell integrated into silicon microfluidic channels.

Implantable electrochemical sensors enable fast and sensitive detection of analytes in biological tissue, but are hampered by bio-foulant attack and are unable to be recalibrated in-situ. Herein, an electrochemical sensor integrated into ultra-low flow (nL/min) silicon microfluidic channels for protection from foulants and in-situ calibration is demonstrated. The small footprint (5 µm radius channel cross-section) of the device allows its integration into implantable sampling probes for monitoring chemical concentrations in biological tissues. The device is designed for fast scan cyclic voltammetry (FSCV) in the thin-layer regime when analyte depletion at the electrode is efficiently compensated by microfluidic flow. A 3X enhancement of faradaic peak currents is observed due to the increased flux of analytes towards the electrodes. Numerical analysis of in-channel analyte concentration confirmed near complete electrolysis in the thin-layer regime below 10 nL/min. The manufacturing approach is highly scalable and reproducible as it utilizes standard silicon microfabrication technologies.

Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects.

Integration of optical communication circuits directly into high-performance microprocessor chips can enable extremely powerful computer systems. A germanium photodetector that can be monolithically integrated with silicon transistor technology is viewed as a key element in connecting chip components with infrared optical signals. Such a device should have the capability to detect very-low-power optical signals at very high speed. Although germanium avalanche photodetectors (APD) using charge amplification close to avalanche breakdown can achieve high gain and thus detect low-power optical signals, they are universally considered to suffer from an intolerably high amplification noise characteristic of germanium. High gain with low excess noise has been demonstrated using a germanium layer only for detection of light signals, with amplification taking place in a separate silicon layer. However, the relatively thick semiconductor layers that are required in such structures limit APD speeds to about 10 GHz, and require excessively high bias voltages of around 25 V (ref. 12). Here we show how nanophotonic and nanoelectronic engineering aimed at shaping optical and electrical fields on the nanometre scale within a germanium amplification layer can overcome the otherwise intrinsically poor noise characteristics, achieving a dramatic reduction of amplification noise by over 70 per cent. By generating strongly non-uniform electric fields, the region of impact ionization in germanium is reduced to just 30 nm, allowing the device to benefit from the noise reduction effects that arise at these small distances. Furthermore, the smallness of the APDs means that a bias voltage of only 1.5 V is required to achieve an avalanche gain of over 10 dB with operational speeds exceeding 30 GHz. Monolithic integration of such a device into computer chips might enable applications beyond computer optical interconnects-in telecommunications, secure quantum key distribution, and subthreshold ultralow-power transistors.

Binary phase-shift keying by coupling modulation of microrings.

We propose a coupling-modulated microring in an add-drop configuration for binary phase-shift keying (BPSK), where data is encoded as 0 and π radian phase-shifts on the optical carrier. The device uses the π radian phase-flip across the zero coupling point in a 2 × 2 Mach-Zehnder interferometer coupler to produce the modulation. The coupling-modulated microring combines the drive power reduction of resonant modulators with the digital phase response of Mach-Zehnder BPSK modulators. A proof-of-concept device was demonstrated in silicon-on-insulator, showing differential binary phase-shift keying operation at 5 and 10 Gb/s.

Cascaded Mach-Zehnder wavelength filters in silicon photonics for low loss and flat pass-band WDM (de-)multiplexing.

We present 1-to-8 wavelength (de-)multiplexer devices based on a binary tree of cascaded Mach-Zehnder-like lattice filters, and manufactured using a 90 nm CMOS-integrated silicon photonics technology. We demonstrate that these devices combine a flat pass-band over more than 50% of the channel spacing with low insertion loss of less than 1.6 dB, and have a small device size of approximately 500 × 400 µm. This makes this type of filters well suited for application as WDM (de-)multiplexer in silicon photonics transceivers for optical data communication in large scale computer systems.

High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.

The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.

Optimized light-matter interaction and defect hole placement in photonic crystal cavity sensors.

Photonic crystal slab cavities were investigated for increased light-matter interaction based on selective placement of sublattice hole sized defect holes inside L3 cavities. A multiple-hole defect (MHD) consisting of three defect holes placed in the regions of highest cavity mode field intensity were demonstrated through finite-difference time-domain simulations and experiments to exhibit the strongest light-matter interaction without introducing significant scattering losses. Compared to an L3 cavity without defect holes, these strategically designed three-hole MHD cavities presented higher quality factor and more than double the resonance wavelength shift upon exposure to a thin oxide and two small chemical molecules.

Drive-noise-tolerant broadband silicon electro-optic switch.

We report a broadband digital electro-optical switch, based upon a multi-stage Mach-Zehnder lattice design in silicon-on-insulator. A digital switching response is demonstrated, engineered through apodization of the coupling coefficients between stages. The digital switching behavior results in crosstalk lower than -15 dB for drive-voltage noise levels in excess of 300 mV(pp), which exceeds the noise tolerance of a conventional single-stage Mach-Zehnder switch by more than six-fold. In addition, the digital design enables a larger maximum 'on'-state extinction (below -26 dB) and lower 'on'-state free-carrier-induced insertion loss (less than 0.45 dB) than that of the single-stage switch. The noise-tolerant, low-crosstalk switch can thus play a key role within CMOS-integrated reconfigurable optical networks operating under noisy on-chip conditions.

Self-phase modulation and nonlinear loss in silicon nanophotonic wires near the mid-infrared two-photon absorption edge.

We report an experimental study of picosecond pulse propagation through a 4-mm-long Si nanophotonic wire with normal dispersion, at excitation wavelengths from 1775 to 2250 nm. This wavelength range crosses the mid-infrared two-photon absorption edge of Si at ~2200 nm. Significant reduction in nonlinear loss due to two-photon absorption is measured as excitation wavelengths approach 2200 nm. At high input power, self-phase modulation is clearly demonstrated by the development of power-dependant spectral fringes. Asymmetry and blue-shift in the appearance of the spectral fringes at 1775 nm versus 2200 nm is further shown to originate from a strong reduction in the intra-pulse density of two-photon absorption-generated free carriers and the associated free-carrier dispersion. Analysis of experimental data and comparison with numerical simulations illustrates that the two-photon absorption coefficient ß(TPA) obtained here from nanophotonic wire measurements is in reasonable agreement with prior measurements of bulk silicon crystals, and that bulk Si values of the nonlinear refractive index n(2) can be confidently incorporated in the modeling of pulse propagation in deeply-scaled waveguide structures.

Non-blocking 4x4 electro-optic silicon switch for on-chip photonic networks.

We present a 4x4 spatially non-blocking Mach-Zehnder based silicon optical switch fabricated using processes fully compatible with standard CMOS. We successfully demonstrate operation in all 9 unique switch states and 12 possible I/O routing configurations, with worst-case cross-talk levels lower than -9 dB, and common spectral bandwidth of 7 nm. High-speed 40 Gbps data transmission experiments verify optical data integrity for all input-output channels.

Active control of slow light on a chip with photonic crystal waveguides.

It is known that light can be slowed down in dispersive materials near resonances. Dramatic reduction of the light group velocity-and even bringing light pulses to a complete halt-has been demonstrated recently in various atomic and solid state systems, where the material absorption is cancelled via quantum optical coherent effects. Exploitation of slow light phenomena has potential for applications ranging from all-optical storage to all-optical switching. Existing schemes, however, are restricted to the narrow frequency range of the material resonance, which limits the operation frequency, maximum data rate and storage capacity. Moreover, the implementation of external lasers, low pressures and/or low temperatures prevents miniaturization and hinders practical applications. Here we experimentally demonstrate an over 300-fold reduction of the group velocity on a silicon chip via an ultra-compact photonic integrated circuit using low-loss silicon photonic crystal waveguides that can support an optical mode with a submicrometre cross-section. In addition, we show fast (approximately 100 ns) and efficient (2 mW electric power) active control of the group velocity by localized heating of the photonic crystal waveguide with an integrated micro-heater.

Photonic crystal slab sensor with enhanced surface area.

In this work, we demonstrate improved molecular detection sensitivity for silicon slab photonic crystal cavities by introducing multiple-hole defects (MHDs), which increase the surface area available for label-free detection without degrading the quality factor. Compared to photonic crystals with L3 defects, adding MHDs into photonic crystal cavities enabled a 44% increase in detection sensitivity towards small refractive index perturbations due to surface monolayer attachment of a small aminosilane molecule. Also, photonic crystals with MHDs exhibited 18% higher detection sensitivity for bulk refractive index changes.

Statistics of light transport in 235-ring silicon coupled-resonator optical waveguides.

In contrast to recent reports of localization-impaired transport in long slow-light waveguides, we demonstrate light transport in silicon coupled-resonator optical waveguides (CROWs) consisting of up to 235 coupled microrings without localization over frequency bands that are several hundred gigahertz wide. Furthermore, from the unique statistical signatures provided by time-domain propagation delay measurements, we demonstrate the spectrally correlated nature of light propagation in CROWs.

CMOS-integrated high-speed MSM germanium waveguide photodetector.

A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.

Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices.

We report the performance of NiSi-based heaters integrated with submicrometer silicon waveguides. The heaters were fabricated using a standard complementary metal-oxide-semiconductor (CMOS) silicidation process on a thin silicon slab laterally connected with a silicon rib waveguide. The intrinsic properties of such NiSi waveguide heaters were characterized by using them as thermo-optic phase shifters in a Mach-Zehnder interferometer. The power consumption P(pi) for obtaining a pi phase shift was measured to be as low as 20 mW, using CMOS-compatible drive voltages. The time constant of the thermo-optic response was less than 2.8 mus. Simulations suggest that a further reduction in the power consumption P(pi) is feasible.

Design of a digital, ultra-broadband electro-optic switch for reconfigurable optical networks-on-chip.

We present a novel design for a noise-tolerant, ultra-broadband electro-optic switch, based on a Mach-Zehnder lattice (MZL) interferometer. We analyze the switch performance through rigorous optical simulations, for devices implemented in silicon-on-insulator with carrier-injection-based phase shifters. We show that such a MZL switch can be designed to have a step-like switching response, resulting in improved tolerance to drive-voltage noise and temperature variations as compared to a single-stage Mach-Zehnder switch. Furthermore, we show that degradation in switching crosstalk and insertion loss due to free-carrier absorption can be largely overcome by a MZL switch design. Finally, MZL switches can be designed for having an ultra-wide, temperature-insensitive optical bandwidth of more than 250 nm. The proposed device shows good potential as a broadband optical switch in reconfigurable optical networks-on-chip.

Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks.

We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off' switching states over an optical bandwidth of 110 nm, owing to the implementation of broadband 50% couplers. Full 2 x 2 switching functionality is demonstrated, with low power consumption (approximately 3 mW) and a fast switching time (< 4 ns). The utilization of standard CMOS metallization results in a low drive voltage (approximately 1 V) and a record-low V(pi)L (approximately 0.06 V x mm). The wide optical bandwidth is maintained for temperature variations up to 30 K.

Conversion of 10 Gb/s NRZ-OOK to RZ-OOK utilizing XPM in a Si nanowire.

We have demonstrated for the first time to our knowledge, the conversion of 10 Gb/s non-return-to-zero (NRZ) on-off keying (NRZ-OOK) to RZ-OOK using cross-phase modulation (XPM) in a compact, Silicon (Si) nanowire and a detuned filter. The pulse format conversion resulted in a polarity-preserved, correctly-coded RZ-OOK signal, with no evidence of an error-floor for BER < 10(-11). The advantages of a passive Si nanowire can lead to a compact, power-efficient, highly simplified configuration, amenable to chip-level integration.

High-order dispersion in photonic crystal waveguides.

High-order dispersion in the slow-light regime of photonic crystal (PhC) waveguides was measured by utilizing integrated Mach-Zehnder interferometer (MZI) structures, and compared with theoretical results obtained from 3D plane-wave calculations. Highly accurate measurements of group-velocity dispersion (GVD), third-order dispersion (TOD) and fourth-order dispersion (FOD) at high group-index (n(g)) values were enabled by minimizing external phase-distortions and increasing signal-to-noise ratio in the MZI. The experimental results for GVD, TOD, and FOD parameters at n(g) approximately 100 were approximately 10(2)ps(2)/mm, approximately 10(4)ps(3)/mm, and approximately 10(5)ps(3)/mm respectively. The results emphasize the importance of taking into consideration the effect of TOD and FOD on pulse broadening in the slow-light regime.

Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator.

Silicon p(+)-i-n(+) diode Mach-Zehnder electrooptic modulators having an ultra-compact length of 100 to 200 mum are presented. These devices exhibit high modulation efficiency, with a V(pi)L figure of merit of 0.36 V-mm. Optical modulation at data rates up to 10 Gb/s is demonstrated with low RF power consumption of only 5 pJ/bit.

Optical modulation using anti-crossing between paired amplitude and phase resonators.

An optical modulator design based upon anti-crossing between coupled silicon microrings with independent amplitude and phase functionality is presented. The device exhibits over 25x improvement in sensitivity to an input drive signal when compared with previously studied microring modulators based on control of waveguide-resonator coupling. The new design also demonstrates an ON-OFF contrast of 14 dB, and has an ultra-compact footprint of 0.003 mm(2). The observed sensitivity enhancement suggests that this modulator may be driven directly by digital CMOS electrical signals with less than 1 V amplitude.