Rashba valleys and quantum Hall states in few-layer black arsenic.

Exciting phenomena may emerge in non-centrosymmetric two-dimensional electronic systems when spin-orbit coupling (SOC)1 interplays dynamically with Coulomb interactions2,3, band topology4,5 and external modulating forces6-8. Here we report synergetic effects between SOC and the Stark effect in centrosymmetric few-layer black arsenic, which manifest as particle-hole asymmetric Rashba valley formation and exotic quantum Hall states that are reversibly controlled by electrostatic gating. The unusual findings are rooted in the puckering square lattice of black arsenic, in which heavy 4p orbitals form a Brillouin zone-centred Γ valley with pz symmetry, coexisting with doubly degenerate D valleys of px origin near the time-reversal-invariant momenta of the X points. When a perpendicular electric field breaks the structure inversion symmetry, strong Rashba SOC is activated for the px bands, which produces spin-valley-flavoured D± valleys paired by time-reversal symmetry, whereas Rashba splitting of the Γ valley is constrained by the pz symmetry. Intriguingly, the giant Stark effect shows the same px-orbital selectiveness, collectively shifting the valence band maximum of the D± Rashba valleys to exceed the Γ Rashba top. Such an orchestrating effect allows us to realize gate-tunable Rashba valley manipulations for two-dimensional hole gases, hallmarked by unconventional even-to-odd transitions in quantum Hall states due to the formation of a flavour-dependent Landau level spectrum. For two-dimensional electron gases, the quantization of the Γ Rashba valley is characterized by peculiar density-dependent transitions in the band topology from trivial parabolic pockets to helical Dirac fermions.

Experimental Observation of Highly Anisotropic Elastic Properties of Two-Dimensional Black Arsenic.

Anisotropic two-dimensional layered materials with low-symmetry lattices have attracted increasing attention due to their unique orientation-dependent mechanical properties. Black arsenic (b-As), with the puckered structure, exhibits extreme in-plane anisotropy in optical, electrical, and thermal properties. However, experimental research on mechanical properties of b-As is very rare, although theoretical calculations predicted the exotic elastic properties of b-As, such as the anisotropic Young's modulus and negative Poisson's ratio. Herein, experimental observations on highly anisotropic elastic properties of b-As were demonstrated using our developed in situ tensile straining setup based on the effective microelectromechanical system. The cyclic and repeatable load-displacement curves proved that Young's modulus along the zigzag direction was ∼1.6 times greater than that along the armchair direction, while the anisotropic ratio of ultimate strain reached ∼2.5, attributed to the hinge structure in the armchair direction. This study could provide significant insights into the design of novel anisotropic materials and explore their potential applications in nanomechanics and nanodevices.

Probing Heterogeneous Folding Pathways of DNA Origami Self-Assembly at the Molecular Level with Atomic Force Microscopy.

A myriad of DNA origami nanostructures have been demonstrated in various intriguing applications. In pursuit of facile yet high-yield synthesis, the mechanisms underlying DNA origami folding need to be resolved. Here, we visualize the folding processes of several multidomain DNA origami structures under ambient annealing conditions in solution using atomic force microscopy with submolecular resolution. We reveal the coexistence of diverse transitional structures that might result in the same prescribed products. Based on the experimental observations and the simulation of the energy landscapes, we propose the heterogeneity of the folding pathways of multidomain DNA origami structures. Our findings may contribute to understanding the high-yield folding mechanism of DNA origami.

3D diversiform dynamic process of microvilli in living cells.

Microvilli are membrane protrusions involved in many membrane-associated physiological processes. Previous studies have focused on the dynamics of individual microvilli, however, the morphological classification of microvilli and the dynamics of microvillar clusters as the basic functional domain remain largely unknown. Here we used atomic force microscopy (AFM) to achieve nanoscale resolution 3D microvilli images of living HeLa cells. We found that there were mainly two subtypes of microvilli with different morphologies and lifecycle that were unequally present on the cell membrane. Employing a strategy to track microvillar cluster movement at nanometer resolution, we further revealed the polymorphic movement of microvillar clusters in 3D. Overall, these data strengthened the morphology and dynamics of cell membranes and associated structures, which provided a new perspective for microvillar function research.

Factors affecting the negative Poisson's ratio of black phosphorus and black arsenic: electronic effects.

Negative Poisson's ratio (NPR) materials (when stretched longitudinally, the thickness of these materials increases along the lateral direction) are widely used in engineering because of their good resistance to shear, denting, and fracture. Observance of a negative Poisson's ratio (NPR) in two-dimensional (2D) single-layer materials presently has two explanations. The first, from mechanical principles, is that it derives from the presence of a special structure (hinge structure), such as in single-layer black phosphorus (BP) or black arsenic (ß-As). The second, from electronic effects, is that it derives from (non-hinge-like) planar honeycomb structures and transition-metal dichalcogenides, MX2. Through first-principle calculations, we show that 2D single-layer materials with a hinge structure also have distinct electronic effects, similar to those observed from 2D planar honeycomb materials. Under strain, electronic effects of Px orbitals lead to the inherent NPR of the 2D single-layer material with a hinge structure. We discuss the influencing factors of the hinge structure on the NPR and demonstrate that the electronic effects inside the hinge structure are the fundamental factor in determining the inherent NPR.

Na-Based monolayer photocatalysts with an extremely high intrinsic electric-field for water splitting.

A strong built-in electric field, high carrier mobility and a wide range of optical absorption values are the key parameters for photocatalysts used in water splitting. The design and preparation of photocatalysts possessing simultaneously these characteristics have always been the main tasks in the water splitting field. Here, we report a new family of 2D Na-based photocatalysts, NaAB2 (A = Al, Ga, In; B = S, Se, Te) monolayers, which may achieve this goal. First-principles calculations show that most of the NaAB2 monolayers are semiconductors with a suitable direct band gap ranging from visible to near-infrared light, exhibiting good optical absorption. The electron mobilities of the NaAB2 monolayers are up to 103 cm2 V-1 s-1, meaning the rapid migration of electrons can promote photocatalytic overall water splitting. Importantly, the electrostatic potential differences between the top surface and the bottom surface are larger than 1.23 eV for all the studied NaAB2 monolayers, meaning a high intrinsic built-in electric field that is present in these Na-based photocatalysts can promote the overall water splitting irrespective of their band gaps and band edges. Our studies show that the NaAB2 monolayers may be ideal photocatalysts for use in water splitting and may initiate a new round of experimental studies.

Effect of magnetic field on electronic transport in a bilayer graphene nanomesh.

We report on the observation of an unexpected sudden increase of resistance in bilayer graphene nanomesh (GNM) in the temperature range 270 ∼ 300 K that is strongly dependent on the magnetic field strength. We conjecture that the sharp increase in resistance originates from ripple scattering as induced by substrate roughness. The observed result is evidence of extrinsic corrugation in bilayer GNM as an additional scattering source that contributes to significant resistance. The observed weak localization in the GNM indicates intervalley scattering induced by lattice defects acts as resonant scatterers attribute to the high D peak. Magnetotransport measurement strongly supports that the charge inhomogeneity related to the intrinsic disorder in bilayer GNM and the positive magnetoresistance shows a linear behavior with magnetic field strength. Potentially, the observed phenomena, therefore, point to a clear pathway towards practical application of bilayer GNM and to the design of a graphene magnetic sensor that can be manipulated by a magnetic field and a new generation of spintronics.

Spin-dependent transport properties of zigzag phosphorene nanoribbons with oxygen-saturated edges.

We investigate the electronic structures and electronic transport properties of zigzag phosphorene nanoribbons with oxygen-saturated edges (O-zPNRs) by using the spin-polarized density functional theory and the nonequilibrium Green's function method. The results show that the O-zPNR is an antiferromagnetic (AFM) or ferromagnetic (FM) semiconductor with spins localized at two ribbon edges anti-parallel or parallel with each other. The electronic transmission for the single AFM or FM O-zPNR is zero when a bias voltage is applied to the two electrodes made of the same type O-zPNR. Nonzero transmission arises for the AFM-AFM and FM-FM O-zPNR heterojunctions. The transmission spectrum and the electrical current are fully spin polarized for the FM-FM O-zPNR heterojunction. An in-plane transverse electrical field can effectively manipulate the electronic structure and spin-dependent electronic transport. It induces splitting of the spins of the two edges and makes the AFM O-zPNR become a half metal. Moreover, the transverse electrical field gives rise to the transmission spectrum and the spin polarized electrical current for the AFM-AFM O-zPNR heterojunction. The degree of spin polarization can be tuned by the strength of the transverse field.

Mechanical stress-induced autophagy is cytoskeleton dependent.

The cytoskeleton is essential for mechanical signal transduction and autophagy. However, few studies have directly demonstrated the contribution of the cytoskeleton to mechanical stress-induced autophagy. We explored the role of the cytoskeleton in response to compressive force-induced autophagy in human cell lines. Inhibition and activation of cytoskeletal polymerization using small chemical molecules revealed that cytoskeletal microfilaments are required for changes in the number of autophagosomes, whereas microtubules play an auxiliary role in mechanical stress-induced autophagy. The intrinsic mechanical properties and special intracellular distribution of microfilaments may account for a large proportion of compression-induced autophagy. Our experimental data support that microfilaments are core components of mechanotransduction signals.

Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic.

Two-dimensional (2D) materials have aroused considerable research interest owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented extremely high anisotropy in physical properties. However, systematic research on structural stability of b-As is still lacking. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables, hydrostatic pressure and temperature. Our results confirmed that b-As can survive only below 0.7 GPa, and then irreversibly transforms to gray arsenic, consistent with our theoretical calculations. Furthermore, a thermal annealing strategy was developed to precisely control the thickness of the b-As flake, and it sublimates at 300 °C. These results could pave the way for 2D b-As in many promising applications.

DNA Framework Programmed Conformational Reconstruction of Antibody Complementary Determining Region.

The conformation of complementary determining region (CDR) is crucial in dictating its specificity and affinity for binding with an antigen, making it a focal point in artificial antibody engineering. Although desirable, programmable scaffolds that can regulate the conformation of individual CDRs with nanometer precision are still lacking. Here, we devise a strategy to program the CDR conformation by anchoring both ends of a free CDR loop to specific sites of a DNA framework structure. This method allows us to define the span of a single CDR loop with an ∼2 nm resolution. Using this approach, we create a series of DNA framework based artificial antibodies (DNFbodies) with varied CDR loop spans, leading to different antibody-antigen binding affinities. We find that an optimized single CDR loop (∼2.3 nm span) exhibits ∼3-fold improved affinity relative to natural antibodies, confirming the critical role of the CDR conformation. This study may inspire the rational design of artificial antibodies.

Gate-controlled ambipolar transport in b-AsP crystals and their VIS-NIF photodetection.

As a new two-dimensional elemental layered semiconductor, black phosphorus (b-P) has received tremendous attention due to its excellent physical and chemical properties and has potential applications in the fields of catalysis, energy, and micro/nano-optoelectronic devices. However, studies have found that b-P is very unstable and will decompose within a few minutes under humid air conditions. Element doping is an effective method for adjusting the physical and chemical properties of crystals. Theoretical and experimental studies have confirmed that the stability of b-P crystals is significantly improved after arsenic doping, and the crystals also exhibit excellent photoresponse and electrical transport performances. In this work, we investigate the physical properties of a component of black arsenic phosphorus crystals (b-As0.084P0.916) and the potential applications in field effect transistors (FETs) and broadband photodetectors. An obvious ambipolar behavior is observed in the transfer characteristics of b-As0.084P0.916 based FETs, with drain current modulation on the order of 105 and the highest charge-carrier mobility of up to 147 cm2 V-1 s-1. The physisorption of atmospheric species on the surface of the FETs is the main factor for the formation of Schottky contacts between the Au electrodes and the b-As0.084P0.916 crystal. Temperature-dependent electrical characteristics show that the Fermi level shifts from the valence band to the middle level between the conduction band and valence band as the temperature decreases. In addition, the FETs also exhibit excellent photoresponse properties from the visible to near-infrared region (450-2200 nm), with a responsivity of 37 A W-1, a specific detectivity of 7.18 × 1010 Jones, and a fast response speed (τrise ≈ 0.04 s and τdecay ≈ 0.14 s). These results suggest that b-As0.084P0.916 crystals are a promising candidate for future electronic and optoelectronic devices.

In-Plane Phonon Anisotropy and Anharmonicity in Exfoliated Natural Black Arsenic.

Group-VA two-dimensional layered materials in a puckered honeycomb structure exhibit strong in-plane anisotropy and have emerged as new platforms for novel devices. Here, we report on systematic Raman investigations on exfoliated b-As flakes on the Ag1 and Ag2 polarization dependence on their symmetry, excitation wavelength, and flake thickness. The intensity maximums of both phonons are corrected in the b-As armchair direction under 633 nm excitation regardless of the flake thickness upon considering optical birefringence effects and interference effects. The intensity ratio of Ag1 to Ag2 modes under 532 nm excitation is useful for b-As crystalline orientation identification. Temperature-dependent Raman investigations reveal the linearly anharmonic behaviors of both phonons in the range from 173 to 293 K and a slightly greater first-order temperature coefficient in the zigzag direction. Our findings give deep insight into the in-plane phonon anisotropy and anharmonicity of b-As and provide a step toward future device applications.

In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic.

Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties and potential applications in multifunctional nanoelectronic and optoelectronic devices. However, anisotropic 2D semiconductors with high performance are still very limited. Here, we report the systematic study of in-plane anisotropic properties in few-layered b-As that is a narrow-gap semiconductor, based on the experimental and theoretical investigations. According to experimental results, we have come up with a simple method for identifying the orientation of b-As crystals. Meanwhile, we show that the maximum mobility of electrons and holes was measured in the in-plane armchair (AC) direction. The measured maximum electron mobility ratio is about 2.68, and the hole mobility ratio is about 1.79.

Phase-Tunable Synthesis of Ultrathin Layered Tetragonal CoSe and Nonlayered Hexagonal CoSe Nanoplates.

Multiple structural phases in transition metal dichalcogenides have attracted considerable recent interest for their tunable chemical and electronic properties. Herein, a chemical vapor deposition route to ultrathin CoSe nanoplates with tunable structure phases is reported. By precisely tailoring the growth temperature, ultrathin 2D layered tetragonal CoSe nanoplates and nonlayered hexagonal CoSe nanoplates can be selectively prepared as square or hexagonal geometries, with thickness as thin as 2.3 and 3.7 nm, respectively. X-ray diffraction, transmission electron microscopy, and selected area electron diffraction studies show that both types of nanoplates are high-quality single crystals. Electrical transport studies reveal that both the tetragonal and hexagonal CoSe nanoplates show strong thickness-tunable electrical properties and excellent breakdown current density. The 2D hexagonal CoSe nanoplates display metallic behavior with an excellent conductivity up to 6.6 × 105 S m-1 and an extraordinary breakdown current density up to 3.9 × 107 A cm-2 , while the square tetragonal nanoplates show considerably lower conductivity up to 8.2 × 104 S m-1 with angle-dependent magnetoresistance and weak antilocalization effect at lower field. This study offers a tunable material system for exploring multiphase 2D materials and their potential applications for electronic and magnetoelectronic devices.

Synthesis of Ultrathin Metallic MTe2 (M = V, Nb, Ta) Single-Crystalline Nanoplates.

Two-dimensional materials with intrinsic magnetism have recently drawn intense interest for both the fundamental studies and potential technological applications. However, the studies to date have been largely limited to mechanically exfoliated materials. Herein, an atmospheric pressure chemical vapor deposition route to ultrathin group VB metal telluride MTe2 (M = V, Nb, Ta) nanoplates with thickness as thin as 3 nm is reported. It is shown that the resulting nanoplates can be systematically evolved from mostly thicker hexagonal domains to thinner triangular domains with an increasing flow rate of the carrier gas. X-ray diffraction and transmission electron microscopy studies reveal MTe2 (M = V, Nb, Ta) nanoplates are high-quality single crystals. High-resolution scanning transmission electron microscope imaging reveals the VTe2 and NbTe2 nanoplates adopt the hexagonal 1T phase and the TaTe2 nanoplates show a monoclinic distorted 1T phase. Electronic transport studies show that MTe2 single crystals exhibit metallic behavior. Magnetic measurements show that VTe2 and NbTe2 exhibit ferromagnetism and TaTe2 shows paramagnetic behavior. The preparation of ultrathin few-layered MTe2 nanoplates will open up exciting opportunities for the burgeoning field of spintronics, sensors, and magneto-optoelectronics.

Black Arsenic: A Layered Semiconductor with Extreme In-Plane Anisotropy.

2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic and energy applications. By definition, these materials are strongly anisotropic between the basal plane and cross the plane. The structural and property anisotropies inside their basal plane, however, are much less investigated. Black phosphorus, for example, is a 2D material that has such in-plane anisotropy. Here, a rare chemical form of arsenic, called black-arsenic (b-As), is reported as a cousin of black phosphorus, as an extremely anisotropic layered semiconductor. Systematic characterization of the structural, electronic, thermal, and electrical properties of b-As single crystals is performed, with particular focus on its anisotropies along two in-plane principle axes, armchair (AC) and zigzag (ZZ). The analysis shows that b-As exhibits higher or comparable electronic, thermal, and electric transport anisotropies between the AC and ZZ directions than any other known 2D crystals. Such extreme in-plane anisotropies can potentially implement novel ideas for scientific research and device applications.

Direct Observation of High Photoresponsivity in Pure Graphene Photodetectors.

Ultrafast and broad spectral bandwidth photodetectors are desirable attributable to their unique bandstructures. Photodetectors based on graphene have great potential due to graphene's outstanding optical and electrical properties. However, the highest reported values of the photoresponsivity of pure graphene are less than 10 mA/W at room temperature, which significantly limits its potential applications. Here, we report a photoresponsivity of 32 A/W in pure monolayer graphene photodetectors, an improvement of over one order of magnitude for functional graphene nanostructures (<3 A/W). The high photocurrent generation in our devices can be attributed to the high sensitivity of graphene's resistivity to a local change of the electric field induced by photo-excited carriers generated in the light-doping substrate. This dramatically increases the feasibility of using graphene for the next generation of photodetectors.