Thermally induced sideband generation in silicon-on-insulator cladding modulated Bragg notch filters.

We investigate and experimentally demonstrate a cladding modulated Bragg grating superstructure as a dynamically tunable and reconfigurable multi-wavelength notch filter. A non-uniform heater element was implemented to periodically modulate the effective index of the grating. The Bragg grating bandwidth is controlled by judiciously positioning loading segments away from the waveguide core, resulting in a formation of periodically spaced reflection sidebands. The thermal modulation of a periodically configured heater elements modifies the waveguide effective index, where an applied current controls the number and intensity of the secondary peaks. The device was designed to operate in TM polarization near the central wavelength of 1550 nm and was fabricated on a 220-nm silicon-on-insulator platform, using titanium-tungsten heating elements and aluminum interconnects. We experimentally demonstrate that the Bragg grating self-coupling coefficient can be effectively controlled in a range from 7 mm-1 to 110 mm-1 by thermal tuning, with a measured bandgap and sideband separation of 1 nm and 3 nm, respectively. The experimental results are in excellent agreement with simulations.

Low-loss grating coupler based on inter-layer mode interference in a hybrid silicon nitride platform.

Surface grating couplers are an important component for interfacing photonic integrated circuits with optical fibers. However, conventional coupler designs typically provide limited performance due to low directionality and poor fiber-to-grating field overlap. The efficiency can be improved by using non-uniform grating structures at the expense of small critical dimensions complicating the fabrication process. While uniform gratings can alleviate this constraint, they produce an exponentially decaying near-field with the Gaussian fiber mode overlap limited to a theoretical maximum of 80%. In this work, we propose a uniform grating coupler that circumvents this field overlap limitation. This is achieved by leveraging inter-layer mode interference through a virtual directional coupler effect in a hybrid amorphous-silicon (α-Si) on silicon nitride (Si3N4) platform. By optimizing the inter-layer gap and grating geometry, a near-Gaussian profile of the out-radiated beam is achieved, resulting in an unprecedented grating-to-fiber overlap of 96%. The full three-dimensional (3D) finite-difference time-domain (FDTD) simulations show a high directionality of 84% and a record coupling loss of -1.27 dB with a 1-dB bandwidth of 20 nm for the uniform grating coupler design. Our device is designed for a wavelength of 950 nm aimed for use in hybrid quantum photonic integrated circuits using III-V quantum dot single photon sources.

Silicon Fresnel Zone Plate Metalens with Subwavelength Gratings.

Metalenses are planar optical components that have demonstrated immense potential for integrated optics. In particular, they are capable of high-efficiency subwavelength focusing without the bulkiness of traditional lenses. Dielectric metalenses operating in the C-band typically employ relatively tall, amorphous silicon structures arranged in a periodic array. Phase control spanning from 0 to 2π is accessed by varying the geometry of these scattering structures. The full 2π phase range is necessary to impose a hyperbolic focusing phase profile, but this is difficult to achieve without custom fabrication practices. In this work, we propose a binary phase Fresnel zone plate metalens designed for the standard 500 nm silicon-on-insulator platform. Our design uses subwavelength gratings with trapezoidal segmentation to form concentric rings. The effective index of the grating is set with the duty cycle using a single full-etch step to form the binary phase profile of the zone plate. The metalens design can be easily tuned to achieve longer focal lengths at different wavelengths. It offers a simple platform for high-throughput wavelength-scale focusing elements in free-space optics, including for microscopy and medical imaging.

Circular Optical Phased Array with Large Steering Range and High Resolution.

Light detection and ranging systems based on optical phased arrays and integrated silicon photonics have sparked a surge of applications over the recent years. This includes applications in sensing, free-space communications, or autonomous vehicles, to name a few. Herein, we report a design of two-dimensional optical phased arrays, which are arranged in a grid of concentric rings. We numerically investigate two designs composed of 110 and 820 elements, respectively. Both single-wavelength (1550 nm) and broadband multi-wavelength (1535 nm to 1565 nm) operations are studied. The proposed phased arrays enable free-space beam steering, offering improved performance with narrow beam divergences of only 0.5° and 0.22° for the 110-element and 820-element arrays, respectively, with a main-to-sidelobe suppression ratio higher than 10 dB. The circular array topology also allows large element spacing far beyond the sub-wavelength-scaled limits that are present in one-dimensional linear or two-dimensional rectangular arrays. Under a single-wavelength operation, a solid-angle steering between 0.21π sr and 0.51π sr is obtained for 110- and 820-element arrays, respectively, while the beam steering spans the range of 0.24π sr and 0.57π sr for a multi-wavelength operation. This work opens new opportunities for future optical phased arrays in on-chip photonic applications, in which fast, high-resolution, and broadband beam steering is necessary.

Compact and highly-efficient broadband surface grating antenna on a silicon platform.

We present a compact silicon-based surface grating antenna design with a high diffraction efficiency of 89% (-0.5 dB) and directionality of 0.94. The antenna is designed with subwavelength-based L-shaped radiating elements in a 300-nm silicon core, maintaining high efficiency with a compact footprint of 7.6 µm × 4.5 µm. The reflectivity remains below -10 dB over the S, C and L optical communication bands. A broad 1-dB bandwidth of 230 nm in diffraction efficiency is achieved with a central wavelength of 1550 nm.

Complex spectral filters in silicon waveguides based on cladding-modulated Bragg gratings.

Spectral filters are important building blocks for many applications in integrated photonics, including datacom and telecom, optical signal processing and astrophotonics. Sidewall-corrugated waveguide grating is typically the preferred option to implement spectral filters in integrated photonic devices. However, in the high-index contrast silicon-on-insulator (SOI) platform, designs with corrugation sizes of only a few tens of nanometers are often required, which hinders their fabrication. In this work, we propose a novel geometry to design complex Bragg filters with an arbitrary spectral response in silicon waveguides with laterally coupled Bragg loading segments. The waveguide core is designed to operate with a delocalized mode field, which helps reduce sensitivity to fabrication errors and increase accuracy on synthesized coupling coefficients and the corresponding spectral shape control. We present an efficient design strategy, based on the layer-peeling and layer-adding algorithms, that allows to readily synthesize an arbitrary target spectrum for our cladding-modulated Bragg gratings. The proposed filter concept and design methodology are validated by designing and experimentally demonstrating a complex spectral filter in an SOI platform, with 20 non-uniformly spaced spectral notches with a 3-dB linewidth as small as 210 pm.

Compact silicon-photonic mode-division (de)multiplexer using waveguide-wrapped microdisk resonators.

We experimentally demonstrate, to the best of our knowledge, the first microdisk-based silicon-photonic mode-division (de)multiplexer circuit, which is compatible with wavelength-division multiplexing for high aggregate bandwidth on-chip optical communications. This circuit uses waveguide-wrapped microdisk resonators, featuring low levels of intermodal crosstalk and insertion loss within an ultracompact footprint. In addition, the proposed device presents an increased free spectral range, allowing for 530 combined data channels. Furthermore, the microdisk structure naturally supports vertically oriented depletion-type pn junctions, which have been shown to reach subfemtojoule-per-bit modulation efficiencies. The high modulation efficiency, compactness, and wide free spectral range of waveguide-wrapped microdisk resonators present the potential for higher bandwidth and lower energy consumption in next-generation data processing and communication applications.

Millimeter-long metamaterial surface-emitting antenna in the silicon photonics platform.

Integrated optical antennas are key components for on-chip light detection and ranging technology (LIDAR). In order to achieve a highly collimated far field with reduced beam divergence, antenna lengths on the order of several millimeters are required. In the high-index contrast silicon photonics platform, achieving such long antennas typically demands weakly modulated gratings with lithographic minimum feature sizes below 10 nm. Here, we experimentally demonstrate a new, to the best of our knowledge, strategy to make long antennas in silicon waveguides using a metamaterial subwavelength grating (SWG) waveguide core loaded with a lateral periodic array of radiative elements. The mode field confinement is controlled by the SWG duty cycle, and the delocalized propagating mode overlaps with the periodic perturbations. With this arrangement, weak antenna radiation strength can be achieved while maintaining a minimum feature size as large as 80 nm. Using this strategy, we experimentally demonstrate a 2-millimeter-long, single-etched subwavelength-engineered optical antenna on a conventional 220 nm SOI platform, presenting a measured far-field beam divergence of 0.1° and a wavelength scanning sensitivity of 0.13°/nm.

Ultrafast electro-optical disk modulators for logic, communications, optical repeaters, and wavelength converters.

We propose a U-shaped pn junction in a silicon-on-insulator microdisk resonator to effectively double the junction-mode overlap in the state-of-the-art, vertical pn junction microdisk electro-optical (EO) modulators. The U-shaped pn junction promotes the maximum overlap between the junction depletion zone and the whispering gallery optical mode in the microdisk. By fully depleting the p region of the npn-sequenced U-junction, the capacitance is reduced below 3 fF, which significantly improves the speed and power performance. In this work, we implement the high-efficiency, depleted U-junction design to maximize the operating bandwidth of EO modulators, EO logic elements, EO 2 × 2 switches for wavelength-division cross-connects, 2 × 2 reconfigurable optical add-drop multiplexers, optical-to-electrical-to-optical (OEO) repeaters-with-gain, OEO wavelength converters, and 2 × 2 optical-optical logic gates. These devices all operate in the 7.6-to-50 GHz bandwidth range with ultralow energy consumption between 0.4 and 9.8 fJ/bit. By using CMOS-compatible materials and fabrication-feasible design dimensions, our proposed high-performance devices offer a promising potential in next-generation, high-volume electro-optical communications and computing circuits.

Highly efficient optical antenna with small beam divergence in silicon waveguides.

Optical antennas are key components in optical phased arrays for light detection and ranging technology requiring long sensing range and high scanning resolution. To achieve a narrow beam width in the far-field region, antenna lengths of several millimeters or more are required. To date, such long antennas have been impossible to achieve in silicon waveguides because currently demonstrated technologies do not allow accurate control of grating strength. Here, we report on a new type of surface-emitting silicon waveguide with a dramatically increased antenna length of L=3.65mm. This is achieved by using a subwavelength metamaterial waveguide core evanescently coupled with radiative segments laterally separated from the core. This results in a far-field diffracted beam width of 0.025°, which is a record small beam divergence for a silicon photonics surface-emitting device. We also demonstrate that by using a design with L-shaped surface-emitting segments, the radiation efficiency of the antenna can be substantially increased compared to a conventional design, with an efficiency of 72% at the wavelength of 1550 nm.

Can heat therapy help patients with heart failure?

To review and analyze the clinical outcomes of thermal therapy (≤1.4°C increase in core body temperature) in patients with heart failure (HF). A systematic review and meta-analysis regarding the effects of thermal therapy on HF was done by searching PubMed, Ovid Medline, Ovid Embase, Scopus, and internal databases up to date (2019). Improvement in the New York Heart Association (NYHA) class: Ten studies with 310 patients showed significant improvement in NYHA class. Only 7 among 40 patients remained in Class IV and 99 patients in Class III from 155 patients. Increased patients in lower classes indicate that more patients showed improvement. Sixteen studies on 506 patients showed an overall improvement of 4.4% of left ventricular ejection fraction (LVEF). Four studies reported improved endothelial dysfunction by 1.7% increase in flow-mediated dilation (FMD) on 130 patients. Reduction in blood pressure: Thermal therapy reduced both systolic blood pressure (SBP) and diastolic blood pressure by 3.1% and 5.31%, respectively, in 431 patients of 15 studies. Decrease in cardiothoracic ratio (CTR): Eight studies reported an average of 5.55% reduction of CTR in a total of 347 patients. Improvement in oxidative stress markers: Plasma brain natriuretic peptide (BNP) levels significantly decreased (mean difference of 14.8 pg/dL) in 303 patients of 9 studies. Improvement of quality of life: Among 65 patients, thermal therapy reduced cardiac death and rehospitalization by 31.3%. A slight increase in core body temperature is a promising, noninvasive, effective, and complementary therapy for patients with HF. Further clinical studies are recommended.

Fiber-chip edge coupler with large mode size for silicon photonic wire waveguides.

Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO2 upper cladding thin high-index Si3N4 layers. The Si3N4 layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

Experimental demonstration of a two-mode (de)multiplexer based on a taper-etched directional coupler.

We experimentally demonstrate a compact, low-cross talk and fabrication-tolerant two-mode (de)multiplexer on the silicon-on-insulator platform. The device consists of a silicon wire waveguide coupled to a taper-etched waveguide. The partially etched taper structure is used to relax fabrication tolerance and thus to ensure high mode-conversion efficiency. The device is 68 µm in length, with a TE0-to-TE1 mode conversion loss of better than -0.8 dB demonstrated over the C-band wavelengths. In addition, the device demonstrates a low TE0-to-TE0 through waveguide insertion loss of better than -1.3 dB with modal cross talk lower than -26 dB, over a 65 nm wavelength range. Finally, we have experimentally demonstrated that the device is tolerant of fabrication errors of up to 20 nm. Better than -6 dB TE0-TE1 conversion loss with a cross talk lower than -23 dB over a 55 nm bandwidth has been obtained with a fabrication tolerance as large as 40 nm.

Two-mode division multiplexing in a silicon-on-insulator ring resonator.

Mode-division multiplexing (MDM) is an emerging multiple-input multiple-output method, utilizing multimode waveguides to increase channel numbers. In the past, silicon-on-insulator (SOI) devices have been primarily focused on single-mode waveguides. We present the design and fabrication of a two-mode SOI ring resonator for MDM systems. By optimizing the device parameters, we have ensured that each mode is treated equally within the ring. Using adiabatic Bezier curves in the ring bends, our ring demonstrated a signal-to-crosstalk ratio above 18 dB for both modes at the through and drop ports. We conclude that the ring resonator has the potential for filtering and switching for MDM systems on SOI.

Fabrication tolerant and broadband polarization splitter and rotator based on a taper-etched directional coupler.

We propose a fabrication tolerant polarization splitter and rotator (PSR) on the silicon-on-insulator platform based on the mode-coupling mechanism. The PSR consists of a silicon wire waveguide coupled to a taper-etched waveguide. Compared to previously reported PSRs based on directional couplers which are sensitive to fabrication variations, the partially etched taper structure can compensate for fabrication inaccuracies. In addition, the taper-etched geometry breaks both the horizontal and vertical symmetries of the waveguide, introducing an additional degree of design freedom to accommodate different upper cladding layers. The proposed PSR can be readily integrated in a planar waveguide circuit using e.g. SiO(2) cladding, making it compatible with typical metal back-end-of-line processes. Our simulation results show that the PSR has a low TM-to-TE polarization conversion loss of -0.09 dB in the C-band (or a conversion efficiency of 98%). A low TE-to-TE through insertion loss (-0.07 dB) and a very low polarization crosstalk (-30 dB) over a wide wavelength range exceeding 160 nm with a large fabrication tolerance (>50 nm) are numerically demonstrated.

Polarization splitter and rotator with subwavelength grating for enhanced fabrication tolerance.

We propose a novel method to implement a compact and fabrication-tolerant polarization splitter and rotator (PSR) on the silicon-on-insulator platform. The PSR consists of a silicon wire waveguide coupled to a subwavelength grating (SWG) waveguide in an asymmetrical directional coupler. The SWG effect allows an additional degree of design freedom to engineer the equivalent material refractive index. This is advantageously used to effectively compensate for fabrication inaccuracies in PSRs. Our simulation results show that the PSR has a low TM-to-TE polarization conversion loss of -0.13 dB (a conversion efficiency of 97%) at the wavelength of 1550 nm, and better than -0.4 dB conversion loss over the entire C-band wavelength range. Compared to the PSRs made of conventional wire waveguides, the use of SWG index engineering improves the waveguide width fabrication tolerance substantially, from ±3 nm to ±40 nm. A compact device size with a coupling length of 25 µm is achieved.

Reconfigurable optical logic in silicon platform.

In this paper, we present a novel, scalable, and reconfigurable optical switch that performs multiple computational logic functions simultaneously. The free-carrier depletion effect is used to perform non-volatile switching operations due to its high speed and low power consumption. We adopt the concept of optical memory using a phase-change material to realize the non-volatile reconfigurability without a constant power supply, in addition to providing a large operating bandwidth required for reconfigurability. The proposed reconfigurable optical logic architecture is realized in a compact microdisk resonator configuration, utilizing both the carrier-depletion-based modulation and phase-change optical memory. This is the first time these two modulation schemes are implemented in the same optical microdisk for the purpose of reconfigurable optical logic.

High-Efficiency Metamaterial-Engineered Grating Couplers for Silicon Nitride Photonics.

Silicon nitride (Si3N4) is an ideal candidate for the development of low-loss photonic integrated circuits. However, efficient light coupling between standard optical fibers and Si3N4 chips remains a significant challenge. For vertical grating couplers, the lower index contrast yields a weak grating strength, which translates to long diffractive structures, limiting the coupling performance. In response to the rise of hybrid photonic platforms, the adoption of multi-layer grating arrangements has emerged as a promising strategy to enhance the performance of Si3N4 couplers. In this work, we present the design of high-efficiency surface grating couplers for the Si3N4 platform with an amorphous silicon (α-Si) overlay. The surface grating, fully formed in an α-Si waveguide layer, utilizes subwavelength grating (SWG)-engineered metamaterials, enabling simple realization through single-step patterning. This not only provides an extra degree of freedom for controlling the fiber-chip coupling but also facilitates portability to existing foundry fabrication processes. Using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations, a metamaterial-engineered grating coupler is designed with a coupling efficiency of -1.7 dB at an operating wavelength of 1.31 µm, with a 1 dB bandwidth of 31 nm. Our proposed design presents a novel approach to developing high-efficiency fiber-chip interfaces for the silicon nitride integration platform for a wide range of applications, including datacom and quantum photonics.

High-efficiency self-focusing metamaterial grating coupler in silicon nitride with amorphous silicon overlay.

Efficient fiber-chip coupling interfaces are critically important for integrated photonics. Since surface gratings diffract optical signals vertically out of the chip, these couplers can be placed anywhere in the circuit allowing for wafer-scale testing. While state-of-the-art grating couplers have been developed for silicon-on-insulator (SOI) waveguides, the moderate index contrast of silicon nitride (SiN) presents an outstanding challenge for implementing efficient surface grating couplers on this platform. Due to the reduced grating strength, a longer structure is required to radiate the light from the chip which produces a diffracted field that is too wide to couple into the fiber. In this work, we present a novel grating coupler architecture for silicon nitride photonic integrated circuits that utilizes an amorphous silicon (α-Si) overlay. The high refractive index of the α-Si overlay breaks the coupler's vertical symmetry which increases the directionality. We implement subwavelength metamaterial apodization to optimize the overlap of the diffracted field with the optical fiber Gaussian mode profile. Furthermore, the phase of the diffracted beam is engineered to focalize the field into an SMF-28 optical fiber placed 55 µm above the surface of the chip. The coupler was designed using rigorous three-dimensional (3D) finite-difference time-domain (FDTD) simulations supported by genetic algorithm optimization. Our grating coupler has a footprint of 26.8 × 32.7 µm2 and operates in the O-band centered at 1.31 µm. It achieves a high directionality of 85% and a field overlap of 90% with a target fiber mode size of 9.2 µm at the focal plane. Our simulations predict a peak coupling efficiency of - 1.3 dB with a 1-dB bandwidth of 31 nm. The α-Si/SiN grating architecture presented in this work enables the development of compact and efficient optical interfaces for SiN integrated photonics circuits with applications including optical communications, sensing, and quantum photonics.

Athermal silicon waveguides with bridged subwavelength gratings for TE and TM polarizations.

In this paper, athermal silicon waveguides using bridged subwavelength grating (BSWG) structures are proposed and investigated. The realization of temperature-independent BSWG waveguides for both polarizations is demonstrated numerically and experimentally. SU-8 polymer is used as the cladding material to compensate for the positive thermo-optic (TO) coefficient (dn/dT) of silicon. We investigate the dependence of the effective TO coefficient of BSWG waveguides on both the bridge width and grating duty cycle. The BSWG waveguides have a width of 490 nm, a height of 260 nm, and a grating pitch of 250 nm. Athermal behavior is achieved for both the transverse-magnetic (TM) and the transverse-electric (TE) polarized light for a variety of bridge width and duty cycle combinations. Furthermore, the BSWGs can be designed to be athermal for both TE and TM polarization simultaneously.