RESUMO
We have investigated the detailed features of photoluminescence (PL) in vertically aligned ZnO nanotube (NT) arrays as a function of temperature, pumping power, and experimental geometries. In samples with different wall thickness (15 or 60 nm), the temperature-dependent PL energy followed the Varshni's formula whose fitting parameters were found to be rather close to zero-dimensional case in the 15 nm-thick NTs with much larger intensity. In reflective geometry with circular excitation beam shape, the emission gradually evolved from spontaneous to stimulated regime, inferred from amplitude and line-width variation. On the other hand, in the edge-emission geometry with needle-like excitation shape, the interaction length dependence was directly traced by using an adjustable slit.
RESUMO
We report the fabrication of vertically aligned ultrafine ZnO nanorods using metal-organic vapor phase epitaxy and applying a two-temperature growth method. First, thick nanorods were grown vertically on the substrate at a lower temperature. Then, ultrafine ZnO nanorods with an average diameter of 17.7 nm were grown from the tips of the thick nanorods at a higher temperature. The direction of the ultrafine ZnO nanorods followed that of the preformed vertically aligned thick nanorods. Electron microscopy revealed that the ultrafine nanorods were single crystals and the growth direction was along the c axis. Excellent photoluminescence characteristics of the nanorods were confirmed.
RESUMO
Logic devices, including OR, AND, NOT, and NOR gates, based on single-crystalline ZnO nanorods are demonstrated. In these devices, ZnO nanorods are employed as semiconducting channels. They control metal/oxide semiconductor junction characteristics, to yield either good ohmic or Schottky contacts, ensuring fabrication of high-performance Schottky diodes and metal-semiconductor field-effect transistors.