Bridging the gap between optical fibers and silicon photonic integrated circuits.

We present a rigorous approach for designing a highly efficient coupling between single mode optical fibers and silicon nanophotonic waveguides based on diffractive gratings. The structures are fabricated on standard SOI wafers in a cost-effective CMOS process flow. The measured coupling efficiency reaches -1.08 dB and a record value of -0.62 dB in the 1550 nm telecommunication window using a uniform and a nonuniform grating, respectively, with a 1 dB-bandwidth larger than 40 nm.

Cost-effective CMOS-compatible grating couplers with backside metal mirror and 69% coupling efficiency.

A highly efficient grating structure for the coupling between standard optical fibers and single-mode waveguides in the silicon-on-insulator platform realized in a CMOS fabrication process is presented. The cost-effective method introduces a backside metal mirror to the grating coupler without need of an extensive wafer-to-wafer bonding. A coupling efficiency of -1.6 dB (around 69%) near the telecommunication wavelength 1550 nm and a large 1 dB-bandwidth of 48 nm are achieved.

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840 GHz gain-bandwidth-product.

In this work we report a separate-absorption-charge-multiplication Ge/Si avalanche photodiode with an enhanced gain-bandwidth-product of 845 GHz at a wavelength of 1310 nm. The corresponding gain value is 65 and the electrical bandwidth is 13 GHz at an optical input power of -30 dBm. The unconventional high gain-bandwidth-product is investigated using device physical simulation and optical pulse response measurement. The analysis of the electric field distribution, electron and hole concentration and drift velocities in the device shows that the enhanced gain-bandwidth-product at high bias voltages is due to a decrease of the transit time and avalanche build-up time limitation at high fields.