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In this work, we study optical spectroscopy of graphene flakes and its derivatives such as graphene oxide and reduced graphene oxide in the same surfactant-free aqueous solution. We show that transmittance (T) and absorbance (A) spectra of different graphene suspension is nearly feature-less as a function of wavelength (λ) in the VIS-NIR range (350-1000â nm) except graphene oxide solution and the smallest graphene flakes, and they change linearly with concentration. The optical absorption coefficient (at 660â nm) of pure graphene solution seems to be flake-size dependent, changing from â¼730â mL·mg-1m-1 (for â¼25â µm flake size) to â¼4400â mL·mg-1m-1 (for â¼2â µm flake size), and it is several times higher than in the case of graphene oxide, which also varies with type and level of doping/defects (checked by FTIR and statistical Raman spectroscopy). Finally, we show wavelength-dependent evolution of optical absorption coefficient in the VIS-NIR range, which is roughly mimicking the A(λ) function but is strongly material-dependent. Our study could be useful for application of graphene solution in optofluidic devices, functional inks or printed flexible optoelectronics.
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We present a versatile ultrafast holmium-doped fiber laser with an intracavity Martinez compressor. The compressor enables continuous dispersion control, spectral filtering, and dual-color operation of the laser. Mode locking is supported for net cavity dispersion values ranging from highly anomalous (-1.42ps2) to net normal (0.3ps2), and wavelength tuning of the optical solitons is obtained in a 2021-2096 nm span. Dual-color pulsed operation of the laser is reached by implementing a mechanical bandstop filter within the compressor. The repetition rate offset of the two emitted frequency combs can be tuned in a 3-8 kHz range by adjusting the net cavity dispersion, or by changing the beam block diameter. We show that a relatively simple fiber resonator integrated with a Martinez compressor can serve as a highly tunable laser source.
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This publisher's note contains corrections to Opt. Lett.45, 956 (2020)OPLEDP0146-959210.1364/OL.383788.
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In 2003, carbon nanotubes opened a new field of research on nanomaterial-based mode-locked fiber lasers. They maintain popularity in the ultrafast laser community due to their broadband operation, relatively high damage threshold, and tunable optical properties. Here we show that metallic carbon nanotube-based thin film fabricated by vacuum filtration technique can be used as a saturable absorber in holmium-doped fiber laser operating in anomalous and normal dispersion regimes. Scaling the absorbers modulation depth by adjusting the film thickness was observed. The Fourier transform limited 6.65 nm wide optical solitons in anomalous dispersion regime were generated. Utilizing stretched-pulse regime greatly improves the laser performance - 212 fs pulses reach the energy of 3.79 nJ.
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In this paper, we report the results of Raman measurements on various molybdenum disulfide (MoS2) nanostructures grown by the chemical vapor deposition (CVD) method on a typical Si/SiO2 substrate. The phonon properties investigated include the positions, widths, and intensities of the E2g and A1g modes and the derivative of the mode positions with respect to the temperature in the 300-460 K range. Our results give new insight into changes in phonon energies in response to different disturbances and show that changes induced by the temperature are similar to the changes induced by stress, making these two factors hardly resolvable in the hωA1g-hωE2g coordinate system. We prove that all our samples are weakly coupled to the substrate; thus, the presented results almost purely illustrate the effect of the temperature and thickness. The much stronger coupling to the substrate, however, can explain the high variation in the data reported in the literature. The statistical approach applied makes our results highly reliable and allows proper uncertainty assessment of the obtained results, which is helpful when comparing our results to the results reported by other authors.
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We demonstrate the relation between the optical blinking of colloidal semiconductor nanocrystals (NCs) and their electrical charge blinking for which we provide the first experimental observation of power-law statistics. To show this, we harness the performance of CdSe/ZnS NCs coupled with carbon nanotube field-effect transistors (CNTFETs), which act as single charge-sensitive electrometers with submillisecond time resolution, at room temperature. A random telegraph signal (RTS) associated with the NC single-trap charging is observed and exhibits power-law temporal statistics (τ(-α), with α in the range of â¼1-3), and a Lorentzian current noise power spectrum with a well-defined 1/f(2) corner. The spectroscopic analysis of the NC-CNTFET devices is consistent with the charging of NC defect states with a charging energy of Ec ≥ 200 meV. These results pave the way for a deeper understanding of the physics and technology of nanocrystal-based optoelectronic devices.
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One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.
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Commonly used materials for protection against ionizing radiation (gamma and X-ray energy range) primarily rely on high-density materials, like lead, steel, or tungsten. However, these materials are heavy and often impractical for various applications, especially where weight is a key parameter, like in avionics or space technology. Here, we study the shielding properties of an alternative light material-a graphene-based composite with a relatively low density ~ 1 g/cm3. We demonstrate that the linear attenuation coefficient is energy of radiation dependent, and it is validated by the XCOM model, showing relatively good agreement. We also show that the mass attenuation coefficient for selected radiation energies is at least comparable with other known materials, exceeding the value of 0.2 cm2/g for higher energies. This study proves the usefulness of a commonly used model for predicting the attenuation of gamma and X-ray radiation for new materials. It shows a new potential candidate for shielding application.
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Van der Waals heterostructures (vdWHSs) enable the fabrication of complex electronic devices based on two-dimensional (2D) materials. Ideally, these vdWHSs should be fabricated in a scalable and repeatable way and only in the specific areas of the substrate to lower the number of technological operations inducing defects and impurities. Here, we present a method of selective fabrication of vdWHSs via chemical vapor deposition by electron-beam (EB) irradiation. We distinguish two growth modes: positive (2D materials nucleate on the irradiated regions) on graphene and tungsten disulfide (WS2) substrates, and negative (2D materials do not nucleate on the irradiated regions) on the graphene substrate. The growth mode is controlled by limiting the air exposure of the irradiated substrate and the time between irradiation and growth. We conducted Raman mapping, Kelvin-probe force microscopy, X-ray photoelectron spectroscopy, and density-functional theory modeling studies to investigate the selective growth mechanism. We conclude that the selective growth is explained by the competition of three effects: EB-induced defects, adsorption of carbon species, and electrostatic interaction. The method here is a critical step toward the industry-scale fabrication of 2D-materials-based devices.
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In this work we demonstrate comprehensive studies on graphene oxide (GO) and reduced graphene oxide (rGO) based saturable absorbers (SA) for mode-locking of Er-doped fiber lasers. The paper describes the fabrication process of both saturable absorbers and detailed comparison of their parameters. Our results show, that there is no significant difference in the laser performance between the investigated SA. Both provided stable, mode-locked operation with sub-400 fs soliton pulses and more than 9 nm optical bandwidth at 1560 nm center wavelength. It has been shown that GO might be successfully used as an efficient SA without the need of its reduction to rGO. Taking into account simpler manufacturing technology and the possibility of mass production, GO seems to be a good candidate as a cost-effective material for saturable absorbers for Er-doped fiber lasers.
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Tecnologia de Fibra Óptica/instrumentação , Grafite/química , Lasers de Estado Sólido , Absorção , Desenho de Equipamento , Análise de Falha de Equipamento , Luz , Oxirredução , Óxidos/químicaRESUMO
We propose a novel method of laser heating control only through change in polarization of the incident light, keeping its power density constant. The idea combines an antenna effect found in isolated multiwalled carbon nanotubes and the possibility of their heating by light illumination. To observe this we used the Raman spectroscopy technique, where the heating manifests itself in a pronounced downshift of the Raman G and 2D lines as a function of the polarization angle. Our method can be useful in field electron emission devices or in selective nanotubes heating and destruction. It can also be extended to other one dimensional nano-objects, if only certain conditions are fulfilled.
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Polymer composites with high dielectric constant and low loss tangent are highly regarded as substrates for modern high-speed electronics. In this work, we analyze the high-frequency dielectric properties of two types of composites based on polypropylene infused with high-dielectric-constant microparticles. Two types of fillers are used: commercial ceramics or titanium oxide (TiO2) with different concentrations. The key observation is that adding the fillers causes an increase of dielectric constants by around 100% (for highest loading) up to 4.2 and 3.4, for micro-ceramics and TiO2 based composites, respectively. Interestingly, for the TiO2 composite, the loss tangent depends on the filler loading volume, whereas the other composite has a slightly increasing tendency, however, being at the level ~ 10-3. To explain the experimental results, a theoretical model determined by microwave reflection and transmission through a representative volume element is proposed, which allows the investigation of the impact of volume ratio, grain shape, aggregation, and size on the loss tangent and permittivity evolution. This approach could be used for modeling other low dielectric loss materials with inclusions.
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Insufficient homogeneity is one of the pressing problems in nanocomposites' production as it largely impairs the properties of materials with relatively high filler concentration. Within this work, it is demonstrated how selected mixing techniques (magnetic mixer stirring, calendaring and microfluidization) affect filler distribution in poly(dimethylsiloxane)-graphene based nanocomposites and, consequently, their properties. The differences were assessed via imaging and thermal techniques, i.a. Raman spectroscopy, differential scanning calorimetry and thermogravimetry. As microfluidization proved to provide the best homogenization, it was used to prepare nanocomposites of different filler concentration, whose structural and thermal properties were investigated. The results show that the concentration of graphene significantly affects polymer chain mobility, grain sizes, defect density and cross-linking level. Both factors considered in this work considerably influence thermal stability and other features which are crucial for application in electronics, EMI shielding, thermal interface materials etc.
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Grafite , Nanocompostos , Grafite/química , Nanocompostos/química , Termogravimetria , Polímeros/química , Varredura Diferencial de CalorimetriaRESUMO
Two-dimensional (2D) transition metal dichalcogenides (TMDs) are increasingly investigated for applications such as optoelectronic memories, artificial neurons, sensors, and others that require storing photogenerated signals for an extended period. In this work, we report an environment- and gate voltage-dependent photocurrent modulation method of TMD monolayer-based devices (WS2 and MoS2). To achieve this, we introduce structural defects using mild argon-oxygen plasma treatment. The treatment leads to an extraordinary over 150-fold enhancement of the photocurrent in vacuum along with an increase in the relaxation time. A significant environmental and electrostatic dependence of the photocurrent signal is observed. We claim that the effect is a combined result of atomic vacancy introduction and oxide formation, strengthened by optimal wavelength choice for the modified surface. We believe that this work contributes to paving the way for tunable 2D TMD optoelectronic applications.
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This article presents an attempt to determine the effect of the MXene phase addition and its decomposition during sintering with the use of the spark plasma sintering method on mechanical properties and residual stress of silicon carbide based composites. For this purpose, the unreinforced silicon carbide sinter and the silicon carbide composite with the addition of 2 wt.% of Ti3C2Tx were tested. The results showed a significant increase of fracture toughness and hardness for composite, respectively 36% and 13%. The numerical study involving this novel method of modelling shows the presence of a complex state of stress in the material, which is related to the anisotropic properties of graphitic carbon structures formed during sintering. An attempt to determine the actual values of residual stress in the tested materials using Raman spectroscopy was also made. These tests showed a good correlation with the constructed numerical model and confirmed the presence of a complex state of residual stress.
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In the age of mobile electronics and increased aerospace interest, multifunctional materials such as the polymer composites reported here are interesting alternatives to conventional materials, offering reduced cost and size of an electrical device packaging. We report a detailed study of an ecological and dual-functional polymer composite for electromagnetic interference (EMI) shielding and heat management applications. We studied a series of polylactic acid/graphene nanoplatelet composites with six graphene nanoplatelet loadings, up to 15 wt%, and three different flake lateral sizes (0.2, 5 and 25 µm). The multifunctionality of the composites is realized via high EMI shielding efficiency exceeding 40 dB per 1 mm thick sample and thermal conductivity of 1.72 W/mK at 15 wt% nanofiller loading. The EMI shielding efficiency measurements were conducted in the microwave range between 0.2 to 12 GHz, consisting of the highly relevant X-band (8-12 GHz). Additionally, we investigate the influence of the nanofiller lateral size on the studied physical properties to optimize the studied functionalities per given nanofiller loading.
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The majority of industry using high-speed communication systems is shifting towards higher frequencies, namely the terahertz range, to meet demands of more effective data transfer. Due to the rising number of devices working in terahertz range, effective shielding of electromagnetic interference (EMI) is required, and thus the need for novel shielding materials to reduce the electromagnetic pollution. Here, we show a study on optical and electrical properties of a series of ethylene co-butyl acrylate/carbon black (EBA/CB) composites with various CB loading. We investigate the transmittance, reflectance, shielding efficiency, absorption coefficient, refractive index and complex dielectric permittivity of the fabricated composites. Finally, we report a material that exhibits superior shielding efficiency (SE)-80 dB at 0.9 THz (14.44 vol% CB loading, 1 mm thick)-which is one of the highest SE values among non-metallic composite materials reported in the literature thus far. Importantly, 99% of the incoming radiation is absorbed by the material, significantly increasing its applicability. The absorption coefficient (α) reaches ~100 cm-1 for the samples with highest CB loading. The EBA/CB composites can be used as lightweight and flexible shielding packaging materials for electronics, as passive terahertz absorbers or as radiation shields for stealth applications.
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In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD). MoS2 synthesized on a three-dimensional (3D) substrate, that is, SiO2, in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS2 on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS2 on SiO2 and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO2, a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in MoS2.
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We report a surfactant-free exfoliation method of WS2 flakes combined with a vacuum filtration method to fabricate thin (<50 nm) WS2 films, that can be transferred on any arbitrary substrate. Films are composed of thin (<4 nm) single flakes, forming a large size uniform film, verified by AFM and SEM. Using statistical phonons investigation, we demonstrate structural quality and uniformity of the film sample and we provide first-order temperature coefficient χ, which shows linear dependence over 300-450 K temperature range. Electrical measurements show film sheet resistance RS = 48 MΩ/Υ and also reveal two energy band gaps related to the intrinsic architecture of the thin film. Finally, we show that optical transmission/absorption is rich above the bandgap exhibiting several excitonic resonances, and nearly feature-less below the bandgap.