Transition from slow Abrikosov to fast moving Josephson vortices in iron pnictide superconductors.

Iron pnictides are layered high T(c) superconductors with moderate material anisotropy and thus Abrikosov vortices are expected in the mixed state. Yet, we have discovered a distinct change in the nature of the vortices from Abrikosov-like to Josephson-like in the pnictide superconductor SmFeAs(O,F) with T(c)~48-50 K on cooling below a temperature T*~41-42 K, despite its moderate electronic anisotropy γ~4-6. This transition is hallmarked by a sharp drop in the critical current and accordingly a jump in the flux-flow voltage in a magnetic field precisely aligned along the FeAs layers, indicative of highly mobile vortices. T* coincides well with the temperature where the coherence length ξ(c) perpendicular to the layers matches half of the FeAs-layer spacing. For fields slightly out-of-plane (> 0.1°- 0.15°) the vortices are completely immobilized as well-pinned Abrikosov segments are introduced when the vortex crosses the FeAs layers. We interpret these findings as a transition from well-pinned, slow moving Abrikosov vortices at high temperatures to weakly pinned, fast flowing Josephson vortices at low temperatures. This vortex dynamics could become technologically relevant as superconducting applications will always operate deep in the Josephson regime.

Critical current oscillations in the intrinsic hybrid vortex state of SmFeAs(O,F).

In layered superconductors the order parameter may be modulated within the unit cell, leading to nontrivial modifications of the vortex core if the interlayer coherence length ξ(c)(T) is comparable to the interlayer spacing. In the iron pnictide SmFeAs(O,F) (T(c)≈50 K) this occurs below a crossover temperature T(⋆)≈41 K, which separates two regimes of vortices: anisotropic Abrikosov-like at high and Josephson-like at low temperatures. Yet in the transition region around T(⋆), hybrid vortices between these two characteristics appear. Only in this region around T(⋆) and for magnetic fields well aligned with the FeAs layers, we observe oscillations of the c-axis critical current j(c)(H) periodic in 1/sqrt[H] due to a delicate balance of intervortex forces and interaction with the layered potential. j(c)(H) shows pronounced maxima when a hexagonal vortex lattice is commensurate with the underlying crystal structure. The narrow temperature window in which oscillations are observed suggests a significant suppression of the order parameter between the superconducting layers in SmFeAs(O,F), despite its low coherence length anisotropy (γ(ξ)≈3-5).

High p doped and robust band structure in Mg-doped hexagonal boron nitride.

In two dimensional materials, substitutional doping during growth can be used to alter the electronic properties. Here, we report on the stable growth of p-type hexagonal boron nitride (h-BN) using Mg-atoms as substitutional impurities in the h-BN honeycomb lattice. We use micro-Raman spectroscopy, angle-resolved photoemission measurements (nano-ARPES) and Kelvin probe force microscopy (KPFM) to study the electronic properties of Mg-doped h-BN grown by solidification from a ternary Mg-B-N system. Besides the observation of a new Raman line at ∼1347 cm-1 in Mg-doped h-BN, nano-ARPES reveals p-type carrier concentration. Our nano-ARPES experiments demonstrate that the Mg dopants can significantly alter the electronic properties of h-BN by shifting the valence band maximum about 150 meV toward higher binding energies with respect to pristine h-BN. We further show that, Mg doped h-BN exhibits a robust, almost unaltered, band structure compared to pristine h-BN, with no significant deformation. Kelvin probe force microscopy (KPFM) confirms the p-type doping, with a reduced Fermi level difference between pristine and Mg-doped h-BN crystals. Our findings demonstrate that conventional semiconductor doping by Mg as substitutional impurities is a promising route to high-quality p-type doped h-BN films. Such stable p-type doping of large band h-BN is a key feature for 2D materials applications in deep ultra-violet light emitting diodes or wide bandgap optoelectronic devices.

High magnetic-field scales and critical currents in SmFeAs(O, F) crystals.

With the discovery of new superconducting materials, such as the iron pnictides, exploring their potential for applications is one of the foremost tasks. Even if the critical temperature T(c) is high, intrinsic electronic properties might render applications difficult, particularly if extreme electronic anisotropy prevents effective pinning of vortices and thus severely limits the critical current density, a problem well known for cuprates. Although many questions concerning microscopic electronic properties of the iron pnictides have been successfully addressed and estimates point to a very high upper critical field, their application potential is less clear. Thus, we focus here on the critical currents, their anisotropy and the onset of electrical dissipation in high magnetic fields up to 65 T. Our detailed study of the transport properties of SmFeAsO(0.7)F(0.25) single crystals reveals a promising combination of high (>2 x 10(6) A cm(-2)) and nearly isotropic critical current densities along all crystal directions. This favourable intragrain current transport in SmFeAs(O, F), which shows the highest T(c) of 54 K at ambient pressure, is a crucial requirement for possible applications. Essential in these experiments are four-probe measurements on focused-ion-beam-cut single crystals with a sub-square-micrometre cross-section, with current along and perpendicular to the crystallographic c axis.

Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response.

Two-dimensional lateral heterojunctions based on monolayer transition-metal dichalcogenides (TMDs) have received increasing attention given that their direct band gap makes them very attractive for optoelectronic applications. Although bilayer TMDs present an indirect band gap, their electrical properties are expected to be less susceptible to ambient conditions, with higher mobilities and density of states when compared to monolayers. Bilayers and few-layers single domain devices have already demonstrated higher performance in radio frequency and photosensing applications. Despite these advantages, lateral heterostructures based on bilayer domains have been less explored. Here, we report the controlled synthesis of multi-junction bilayer lateral heterostructures based on MoS2-WS2 and MoSe2-WSe2 monodomains. The heterojunctions are created via sequential lateral edge-epitaxy that happens simultaneously in both the first and the second layers. A phenomenological mechanism is proposed to explain the growth mode with self-limited thickness that happens within a certain window of growth conditions. With respect to their as-grown monolayer counterparts, bilayer lateral heterostructures yield nearly 1 order of magnitude higher rectification currents. They also display a clear photovoltaic response, with short circuit currents ∼103 times larger than those extracted from the as-grown monolayers, in addition to room-temperature electroluminescence. The improved performance of bilayer heterostructures significantly expands the potential of two-dimensional materials for optoelectronics.

Raman and electrical transport properties of few-layered arsenic-doped black phosphorus.

Black phosphorus (b-P) is an allotrope of phosphorus whose properties have attracted great attention. In contrast to other 2D compounds, or pristine b-P, the properties of b-P alloys have yet to be explored. In this report, we present a detailed study on the Raman spectra and on the temperature dependence of the electrical transport properties of As-doped black phosphorus (b-AsP) for an As fraction x = 0.25. The observed complex Raman spectra were interpreted with the support of Density Functional Theory (DFT) calculations since each original mode splits in three due to P-P, P-As, and As-As bonds. Field-effect transistors (FET) fabricated from few-layered b-AsP exfoliated onto Si/SiO2 substrates exhibit hole-doped like conduction with a room temperature ON/OFF current ratio of ∼103 and an intrinsic field-effect mobility approaching ∼300 cm2 V-1 s-1 at 300 K which increases up to 600 cm2 V-1 s-1 at 100 K when measured via a 4-terminal method. Remarkably, these values are comparable to, or higher, than those initially reported for pristine b-P, indicating that this level of As doping is not detrimental to its transport properties. The ON to OFF current ratio is observed to increase up to 105 at 4 K. At high gate voltages b-AsP displays metallic behavior with the resistivity decreasing with decreasing temperature and saturating below T ∼100 K, indicating a gate-induced insulator to metal transition. Similarly to pristine b-P, its transport properties reveal a high anisotropy between armchair (AC) and zig-zag (ZZ) directions. Electronic band structure computed through periodic dispersion-corrected hybrid Density Functional Theory (DFT) indicate close proximity between the Fermi level and the top of the valence band(s) thus explaining its hole doped character. Our study shows that b-AsP has potential for optoelectronics applications that benefit from its anisotropic character and the ability to tune its band gap as a function of the number of layers and As content.

Vacancies, disorder-induced smearing of the electronic structure, and its implications for the superconductivity of anti-perovskite MgC0.93Ni2.85.

The anti-perovskite superconductor MgC0.93Ni2.85 was studied using high-resolution x-ray Compton scattering combined with electronic structure calculations. Compton scattering measurements were used to determine experimentally a Fermi surface that showed good agreement with that of our supercell calculations, establishing the presence of the predicted hole and electron Fermi surface sheets. Our calculations indicate that the Fermi surface is smeared by the disorder due to the presence of vacancies on the C and Ni sites, but does not drastically change shape. The 20% reduction in the Fermi level density-of-states would lead to a significant (~70%) suppression of the superconducting T c for pair-forming electron-phonon coupling. However, we ascribe the observed much smaller T c reduction at our composition (compared to the stoichiometric compound) to the suppression of pair-breaking spin fluctuations.

Pressure-induced electronic phase separation of magnetism and superconductivity in CrAs.

The recent discovery of pressure (p) induced superconductivity in the binary helimagnet CrAs has raised questions on how superconductivity emerges from the magnetic state and on the mechanism of the superconducting pairing. In the present work the suppression of magnetism and the occurrence of superconductivity in CrAs were studied by means of muon spin rotation. The magnetism remains bulk up to p ≃ 3.5 kbar while its volume fraction gradually decreases with increasing pressure until it vanishes at p ≃ 7 kbar. At 3.5 kbar superconductivity abruptly appears with its maximum Tc ≃ 1.2 K which decreases upon increasing the pressure. In the intermediate pressure region (3.5 < or ~ p < or ~ 7 kbar) the superconducting and the magnetic volume fractions are spatially phase separated and compete for phase volume. Our results indicate that the less conductive magnetic phase provides additional carriers (doping) to the superconducting parts of the CrAs sample thus leading to an increase of the transition temperature (Tc) and of the superfluid density (ρs). A scaling of ρs with Tc(3.2) as well as the phase separation between magnetism and superconductivity point to a conventional mechanism of the Cooper-pairing in CrAs.