Additive Manufacturing of Gold Nanostructures Using Nonlinear Photoreduction under Controlled Ionic Diffusion.

Multiphoton photoreduction of photosensitive metallic precursors via direct laser writing (DLW) is a promising technique for the synthesis of metallic structures onto solid substrates at the sub-micron scale. DLW triggered by a two photon absorption process is done using a femtosecond NIR laser (λ = 780 nm), tetrachloroauric acid (HAuCl4) as a gold precursor, and isinglass as a natural hydrogel matrix. The presence of a polymeric, transparent matrix avoids unwanted diffusive processes acting as a network for the metallic nanoparticles. After the writing process, a bath in deionized water removes the gold precursor ions and eliminates the polymer matrix. Different aspects underlying the growth of the gold nanostructures (AuNSs) are here investigated to achieve full control on the size and density of the AuNSs. Writing parameters (laser power, exposure time, and scanning speed) are optimized to control the patterns and the AuNSs size. The influence of a second bath containing Au3+ to further control the size and density of the AuNSs is also investigated, observing that these AuNSs are composed of individual gold nanoparticles (AuNPs) that grow individually. A fine-tuning of these parameters leads to an important improvement of the created structures' quality, with a fine control on size and density of AuNSs.

The Role of Polarity in Nonplanar Semiconductor Nanostructures.

The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e.g., electronic or photonic) and morphological features (e.g., shape, growth direction, and so forth) also strongly depend on the polarity. It has been observed that nanoscale materials tend to grow with a specific polarity, which can eventually be reversed for very specific growth conditions. In addition, polar-directed growth affects the defect density and topology and might induce eventually the formation of undesirable polarity inversion domains in the nanostructure, which in turn will affect the photonic and electronic final device performance. Here, we present a review on the polarity-driven growth mechanism at the nanoscale, combining our latest investigation with an overview of the available literature highlighting suitable future possibilities of polarity engineering of semiconductor nanostructures. The present study has been extended over a wide range of semiconductor compounds, covering the most commonly synthesized III-V (GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb) and II-VI (ZnO, ZnTe, CdS, CdSe, CdTe) nanowires and other free-standing nanostructures (tripods, tetrapods, belts, and membranes). This systematic study allowed us to explore the parameters that may induce polarity-dependent and polarity-driven growth mechanisms, as well as the polarity-related consequences on the physical properties of the nanostructures.

High Spatial Resolution Mapping of Localized Surface Plasmon Resonances in Single Gallium Nanoparticles.

Plasmonics has emerged as an attractive field driving the development of optical systems in order to control and exploit light-matter interactions. The increasing interest around plasmonic systems is pushing the research of alternative plasmonic materials, spreading the operability range from IR to UV. Within this context, gallium appears as an ideal candidate, potentially active within a broad spectral range (UV-VIS-IR), whose optical properties are scarcely reported. Importantly, the smart design of active plasmonic materials requires their characterization at high spatial and spectral resolution to access the optical fingerprint of individual nanostructures, attainable by transmission electron microscopy techniques (i.e., by means of electron energy-loss spectroscopy, EELS). Therefore, the optical response of individual Ga nanoparticles (NPs) by means of EELS measurements is analyzed, in order to spread the understanding of the plasmonic response of Ga NPs. The results show that single Ga NPs may support several plasmon modes, whose nature is extensively discussed.

Growth of Au-Pd2Sn Nanorods via Galvanic Replacement and Their Catalytic Performance on Hydrogenation and Sonogashira Coupling Reactions.

Colloidal Pd2Sn and Au-Pd2Sn nanorods (NRs) with tuned size were produced by the reduction of Pd and Sn salts in the presence of size- and shape-controlling agents and the posterior growth of Au tips through a galvanic replacement reaction. Pd2Sn and Au-Pd2Sn NRs exhibited high catalytic activity toward quasi-homogeneous hydrogenation of alkenes (styrene and 1-octene) and alkynes (phenylacetylene and 1-octyne) in dichloromethane. Au-Pd2Sn NRs showed higher activity than Pd2Sn for 1-octene, 1-octyne, and phenylacetylene. In Au-Pd2Sn heterostructures, X-ray photoelectron spectroscopy evidenced an electron donation from the Pd2Sn NR to the Au tips. Such heterostructures showed distinct catalytic behavior in the hydrogenation of compounds containing a triple bond such as tolan. This can be explained by the aurophilicity of triple bonds. To further study this effect, Pd2Sn and Au-Pd2Sn NRs were also tested in the Sonogashira coupling reaction between iodobenzene and phenylacetylene in N, N-dimethylformamide. At low concentration, this reaction provided the expected product, tolan. However, at high concentration, more reduced products such as stilbene and 1,2-diphenylethane were also obtained, even without the addition of H2. A mechanism for this unexpected reduction is proposed.

Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System.

Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12,000 cm(2)·V(-1)·s(-1). Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

Surface Hydrogen Enables Subeutectic Vapor-Liquid-Solid Semiconductor Nanowire Growth.

Vapor-liquid-solid nanowire growth below the bulk metal-semiconductor eutectic temperature is known for several systems; however, the fundamental processes that govern this behavior are poorly understood. Here, we show that hydrogen atoms adsorbed on the Ge nanowire sidewall enable AuGe catalyst supercooling and control Au transport. Our approach combines in situ infrared spectroscopy to directly and quantitatively determine hydrogen atom coverage with a "regrowth" step that allows catalyst phase to be determined with ex situ electron microscopy. Maintenance of a supercooled catalyst with only hydrogen radical delivery confirms the centrality of sidewall chemistry. This work underscores the importance of the nanowire sidewall and its chemistry on catalyst state, identifies new methods to regulate catalyst composition, and provides synthetic strategies for subeutectic growth in other nanowire systems.

Orientationally Ordered Silicon Nanocrystal Cuboctahedra in Superlattices.

Uniform silicon nanocrystals were synthesized with cuboctahedral shape and passivated with 1-dodecene capping ligands. Transmission electron microscopy, electron diffraction, and grazing incidence wide-angle and small-angle X-ray scattering show that these soft cuboctahedra assemble into face-centered cubic superlattices with orientational order. The preferred nanocrystal orientation was found to depend on the orientation of the superlattices on the substrate, indicating that the interactions with the substrate and assembly kinetics can influence the orientation of faceted nanocrystals in superlattices.

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy.

In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks are structured by electron beam lithography which allows the fabrication of perfectly homogeneous GaN NW arrays with different diameters and distances. While the wurtzite NWs are found to be Ga-polar, N-polar nucleation leads to the formation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 °C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by employing a highly competitive growth regime.

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga.

GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of GaAs nanowires on patterned Si in a reproducible way: contact angle and pinning of the Ga droplet inside the apertures achieved by the modification of the surface properties of the nanoscale areas exposed to growth. As an example, an amorphous silicon layer between the crystalline substrate and the oxide mask results in a contact angle around 90°, leading to a high yield of vertical nanowires. Another example for tuning the contact angle is anticipated, native oxide with controlled thickness. This work opens new perspectives for the rational and reproducible growth of GaAs nanowire arrays on silicon.

Role of silicon nanowire diameter for alkyl (chain lengths C1-C18) passivation efficiency through Si-C bonds.

The effect of silicon nanowire (Si NW) diameter on the functionalization efficiency as given by covalent Si-C bond formation is studied for two distinct examples of 25 ± 5 and 50 ± 5 nm diameters (Si NW25 and Si NW50, respectively). A two-step chlorination/alkylation process is used to connect alkyl chains of various lengths (C1-C18) to thinner and thicker Si NWs. The shorter the alkyl chain lengths, the larger the surface coverage of the two studied Si NWs. Increasing the alkyl chain length (C2-C9) changes the coverage on the NWs: while for Si NW25 90 ± 10% of all surface sites are covered with Si-C bonds, only 50 ± 10% of all surface sites are covered with Si-C bonds for the Si NW50 wires. Increasing the chain length further to C14-C18 decreases the alkyl coverage to 36 ± 6% in thin Si NW25 and to 20 ± 5% in thick Si NW50. These findings can be interpreted as being a result of increased steric hindrance of Si-C bond formation for longer chain lengths and higher surface energy for the thinner Si NWs. As a direct consequence of these findings, Si NW surfaces have different stabilities against oxidation: they are more stable at higher Si-C bond coverage, and the surface stability was found to be dependent on the Si-C binding energy itself. The Si-C binding energy differs according to (C1-9)-Si NW > (C14-18)-Si NW, i.e., the shorter the alkyl chain, the greater the Si-C binding energy. However, the oxidation resistance of the (C2-18)-Si NW25 is lower than for equivalent Si NW50 surfaces as explained and experimentally substantiated based on electronic (XPS and KP) and structure (TEM and HAADF) measurements.

Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures.

Combination of mismatched materials in semiconductor nanowire heterostructures offers a freedom of bandstructure engineering that is impossible in standard planar epitaxy. Nevertheless, the presence of strain and structural defects directly control the optoelectronic properties of these nanomaterials. Understanding with atomic accuracy how mismatched heterostructures release or accommodate strain, therefore, is highly desirable. By using atomic resolution high angle annular dark field scanning transmission electron microscopy combined with geometrical phase analyses and computer simulations, we are able to establish the relaxation mechanisms (including both elastic and plastic deformations) to release the mismatch strain in axial nanowire heterostructures. Formation of misfit dislocations, diffusion of atomic species, polarity transfer, and induced structural transformations are studied with atomic resolution at the intermediate ternary interfaces. Two nanowire heterostructure systems with promising applications (InAs/InSb and GaAs/GaSb) have been selected as key examples.

Probing the internal electric field in GaN/AlGaN nanowire heterostructures.

We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al0.3Ga0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [0001̅]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.

Highly enhanced exciton recombination rate by strong electron-phonon coupling in single ZnTe nanobelt.

Electron-phonon coupling plays a key role in a variety of elemental excitations and their interactions in semiconductor nanostructures. Here we demonstrate that the relaxation rate of free excitons in a single ZnTe nanobelt (NB) is considerably enhanced via a nonthermalized hot-exciton emission process as a result of an ultrastrong electron-phonon coupling. Using time-resolved photoluminescence (PL) spectroscopy and resonant Raman spectroscopy (RRS), we present a comprehensive study on the identification and the dynamics of free/bound exciton recombination and the electron-phonon interactions in crystalline ZnTe NBs. Up to tenth-order longitudinal optical (LO) phonons are observed in Raman spectroscopy, indicating an ultrastrong electron-phonon coupling strength. Temperature-dependent PL and RRS spectra suggest that electron-phonon coupling is mainly contributed from Light hole (LH) free excitons. With the presence of hot-exciton emission, two time constants (∼80 and ∼18 ps) are found in photoluminescence decay curves, which are much faster than those in many typical semiconductor nanostructures. Finally we prove that under high excitation power amplified spontaneous emission (ASE) originating from the electron-hole plasma occurs, thereby opening another radiative decay channel with an ultrashort lifetime of few picoseconds.

Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis.

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.

STEM Tools for Semiconductor Characterization: Beyond High-Resolution Imaging.

The smart engineering of novel semiconductor devices relies on the development of optimized functional materials suitable for the design of improved systems with advanced capabilities aside from better efficiencies. Thereby, the characterization of these materials at the highest level attainable is crucial for leading a proper understanding of their working principle. Due to the striking effect of atomic features on the behavior of semiconductor quantum- and nanostructures, scanning transmission electron microscopy (STEM) tools have been broadly employed for their characterization. Indeed, STEM provides a manifold characterization tool achieving insights on, not only the atomic structure and chemical composition of the analyzed materials, but also probing internal electric fields, plasmonic oscillations, light emission, band gap determination, electric field measurements, and many other properties. The emergence of new detectors and novel instrumental designs allowing the simultaneous collection of several signals render the perfect playground for the development of highly customized experiments specifically designed for the required analyses. This paper presents some of the most useful STEM techniques and several strategies and methodologies applied to address the specific analysis on semiconductors. STEM imaging, spectroscopies, 4D-STEM (in particular DPC), and in situ STEM are summarized, showing their potential use for the characterization of semiconductor nanostructured materials through recent reported studies.

Self-Assembly of CsPbBr3 Perovskites in Micropatterned Polymeric Surfaces: Toward Luminescent Materials with Self-Cleaning Properties.

In this work, we present a series of porous, honeycomb-patterned polymer films containing CsPbBr3 perovskite nanocrystals as light emitters prepared by the breath figure approach. Microscopy analysis of the topography and composition of the material evidence that the CsPbBr3 nanocrystals are homogeneously distributed within the polymer matrix but preferably confined inside the pores due to the fabrication process. The optical properties of the CsPbBr3 nanocrystals remain unaltered after the film formation, proving that they are stable inside the polystyrene matrix, which protects them from degradation by environmental factors. Moreover, these surfaces present highly hydrophobic behavior due to their high porosity and defined micropatterning, which is in agreement with the Cassie-Baxter model. This is evidenced by performing a proof-of-concept coating on top of 3D-printed LED lenses, conferring the material with self-cleaning properties, while the CsPbBr3 nanocrystals embedded inside the polymeric matrix maintain their luminescent behavior.

Synthesis of Silver Nanocomposites for Stereolithography: In Situ Formation of Nanoparticles.

Additive Manufacturing (AM) offers remarkable advantages in relation to traditional methods used to obtain solid structures, such as the capability to obtain customized complex geometries adapted to individual requirements. The design of novel nanocomposites suitable for AM is an excellent strategy to widen the application field of these techniques. In this work, we report on the fabrication of metal/polymer nanocomposites with enhanced optical/electrical behaviour for stereolithography (SLA). In particular, we analyse the in situ generation of Ag nanoparticles (NPs) from Ag precursors (AgNO3 and AgClO4) within acrylic resins via SLA. Transmission electron microscopy (TEM) analysis confirmed the formation of Ag NPs smaller than 5 nm in all nanocomposites, providing optical activity to the materials. A high density of Ag NPs with a good distribution through the material for the larger concentration of AgClO4 precursor tested was observed, in contrast to the isolated agglomerations found when the precursor amount was reduced to 0.1%. A significant reduction in the electrical resistivity up to four orders of magnitude was found for this material compared to the unfilled resin. However, consumption of part of the photoinitiator in the formation process of the Ag NPs contributed to a reduction in the polymerization degree of the resin and, consequently, degraded the mechanical properties of the nanocomposites. Experiments with longer curing times showed that, for the higher AgClO4 concentrations tested, post-curing times of 300 min allowed an 80% degree of polymerization to be achieved. These conditions turned these materials into promising candidates to obtain solid structures with multifunctional properties.

Stereolithography of Semiconductor Silver and Acrylic-Based Nanocomposites.

Polymer nanocomposites (PNCs) attract the attention of researchers and industry because of their potential properties in widespread fields. Specifically, electrically conductive and semiconductor PNCs are gaining interest as promising materials for biomedical, optoelectronic and sensing applications, among others. Here, metallic nanoparticles (NPs) are extensively used as nanoadditives to increase the electrical conductivity of mere acrylic resin. As the in situ formation of metallic NPs within the acrylic matrix is hindered by the solubility of the NP precursors, we propose a method to increase the density of Ag NPs by using different intermediate solvents, allowing preparation of Ag/acrylic resin nanocomposites with improved electrical behaviour. We fabricated 3D structures using stereolithography (SLA) by dissolving different quantities of metal precursor (AgClO4) in methanol and in N,N-dimethylformamide (DMF) and adding these solutions to the acrylic resin. The high density of Ag NPs obtained notably increases the electrical conductivity of the nanocomposites, reaching the semiconductor regime. We analysed the effect of the auxiliary solvents during the printing process and the implications on the mechanical properties and the degree of cure of the fabricated nanocomposites. The good quality of the materials prepared by this method turn these nanocomposites into promising candidates for electronic applications.

Comparison of the Material Quality of AlxIn1-xN (x-0-0.50) Films Deposited on Si(100) and Si(111) at Low Temperature by Reactive RF Sputtering.

AlxIn1-xN ternary semiconductors have attracted much interest for application in photovoltaic devices. Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300 °C, respectively. X-ray diffraction measurements reveal a c-axis-oriented wurtzite structure with no phase separation regardless of the Al content (x = 0-0.50), which increases with the Al power supply. The surface morphology of the AlxIn1-xN layers improves with increasing Al content (the root-mean-square roughness decreases from ≈12 to 2.5 nm), and it is similar for samples grown on both Si substrates. The amorphous layer (~2.5 nm thick) found at the interface with the substrates explains the weak influence of their orientation on the properties of the AlxIn1-xN films. Simultaneously grown AlxIn1-xN-on-sapphire samples point to a residual n-type carrier concentration in the 1020-1021 cm-3 range. The optical band gap energy of these layers evolves from 1.75 to 2.56 eV with the increase in the Al. PL measurements of AlxIn1-xN show a blue shift in the peak emission when adding the Al, as expected. We also observe an increase in the FWHM of the main peak and a decrease in the integrated emission with the Al content in room-temperature PL measurements. In general, the material quality of the AlxIn1-xN films on Si is similar for both crystallographic orientations.

Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications.

Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.