Artificial Retina Based on Organic Heterojunction Transistors for Mobile Recognition.

The flicker frequency of incident light constitutes a critical determinant in biology. Nevertheless, the exploration of methods to simulate external light stimuli with varying frequencies and develop artificial retinal neurons capable of responsive behavior remains an open question. This study presents an artificial neuron comprising organic phototransistors. The triggering properties of neurons are modulated by optical input, enabling them to execute rudimentary synaptic functions, emulating the biological characteristics of retinal neurons. The artificial retinal neuron exhibits varying responses to incoming light frequencies, allowing it to replicate the persistent visual behavior of the human eye and facilitating image discrimination. Additionally, through seamless integration with circuitry, it can execute motion recognition on a machine cart, preventing collisions with high-speed obstacles. The artificial retinal neuron offers a cost-effective and energy-efficient route for future mobile robot processors.

Dynamic Photoresponse of a DNTT Organic Phototransistor.

The photosensitivity, responsivity, and signal-to-noise ratio of organic phototransistors depend on the timing characteristics of light pulses. However, in the literature, such figures of merit (FoM) are typically extracted in stationary conditions, very often from IV curves taken under constant light exposure. In this work, we studied the most relevant FoM of a DNTT-based organic phototransistor as a function of the timing parameters of light pulses, to assess the device suitability for real-time applications. The dynamic response to light pulse bursts at ~470 nm (close to the DNTT absorption peak) was characterized at different irradiances under various working conditions, such as pulse width and duty cycle. Several bias voltages were explored to allow for a trade-off to be made between operating points. Amplitude distortion in response to light pulse bursts was also addressed.

Enhancing the Performance of Organic Phototransistors Based on Oriented Floating Films of P3HT Assisted by Al-Island Deposition.

The fabrication of high-performance Organic Phototransistors (OPTs) by depositing Al-islands atop Poly(3-hexylthiophene) (P3HT) thin film coated using the unidirectional floating-film transfer method (UFTM) has been realized. Further, the effect of Al-island thickness on the OPTs' performance has been intensively investigated using X-ray photoelectron spectroscopy, X-ray Diffraction, Atomic force microscopy and UV-Vis spectroscopy analysis. Under the optimized conditions, OPTs' mobility and on-off ratio were found to be 2 × 10-2 cm2 V-1 s-1 and 3 × 104, respectively. Further, the device exhibited high photosensitivity of 105, responsivity of 339 A/W, detectivity of 3 × 1014 Jones, and external quantum efficiency of 7.8 × 103% when illuminated with a 525 nm LED laser (0.3 mW/cm2).

Ionic Liquid-Gated Near-Infrared Polymer Phototransistors and Their Persistent Photoconductivity Application in Optical Memory.

Organic phototransistors (OPTs) based on polymers have attracted substantial attention due to their excellent signal amplification, significant noise reduction, and solution process. Recently, the near-infrared (NIR) detection becomes urgent for OPTs with the increased demand for biomedicine, medical diagnostics, and health monitoring. To achieve this goal, a low working voltage of the OPTs is highly desirable. Therefore, the traditional dielectric gate can be replaced by an electrolyte gate to form electrolyte-gated organic phototransistors (EGOPTs), which are not only able to work at voltages below 1.0 V but also are biocompatible. PCDTPT, one of the most popular narrow band gap donor-acceptor copolymer, has been rarely studied in EGOPTs. In this work, an organic NIR-sensitive EGOPT based on PCDTPT is demonstrated with the detectivity of 7.08 × 1011 Jones and the photoresponsivity of 3.56 A/W at a low operating voltage. In addition, an existing persistent photoconductivity (PPC) phenomenon was also observed when the device was exposed to air. The PPC characteristic of the EGOPT in air has been used to achieve a phototransistor memory, and the gate bias can directly eliminate the PPC as an erasing operation. This work reveals the underlying mechanism of the electrolyte-gated organic phototransistor memories and broadens the application of the EGOPTs.

Short-Wave Infrared-Sensing Organic Phototransistors with a Triarylamine-Based Polymer Doped with a Lewis Acid-Type Small Molecule.

Here, we report that a triarylamine-based polymer, poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (PolyTPD), is effectively doped with tris(pentafluorophenyl)borane (BCF) and the doping level is dependent on the molar ratio of BCF to PolyTPD (repeating unit). The doping reaction is performed at 25 °C at the solution states using chlorobenzene solvent by varying the BCF molar ratio up to 2.0. The resulting PolyTPD:BCF films show new broad optical absorption peaks at a wavelength of λ = 1000-3300 nm, covering the full range of short-wave infrared (SWIR, λ = 1400-3000 nm), which is stronger at a higher BCF molar ratio. Spectroscopic characterizations confirm the generation of radicals (single electrons) in PolyTPD by BCF doping, which resulted in a gradual shift of the highest occupied molecular orbital (HOMO) energy level with the BCF molar ratio. The PolyTPD:BCF films are applied as a gate-sensing layer (GSL) in the geometry of organic field-effect transistors (OFETs), leading to SWIR-sensing organic phototransistors (OPTRs). The optimized SWIR-OPTRs with the PolyTPD:BCF GSLs (BCF molar ratio = 0.5) can detect SWIR light with maximum photoresponsivities of 583.4 mA/W (λ = 1500 nm), 695.4 mA/W (λ = 2000 nm), and 829.4 mA/W (λ = 2500 nm).

Improvement of Photoresponse in Organic Phototransistors through Bulk Effect of Photoresponsive Gate Insulators.

In this study, we investigate the bulk effect of photoresponsive gate insulators on the photoresponse of organic phototransistors (OPTs), using OPTs with poly(4-vinylphenol) layers of two different thicknesses. For the photoresponse, the interplay between the charge accumulation (capacitance) and light-absorbance capabilities of a photoresponsive gate insulator was investigated. Although an OPT with a thicker gate insulator exhibits a lower capacitance and hence a lower accumulation capability of photogenerating charges, a thicker poly(4-vinylphenol) layer, in contrast to a thinner one, absorbs more photons to generate more electron-hole pairs, resulting in a higher photoresponse of the device. That is, in these two cases, the degree of light absorption by the photoresponsive gate insulators dominantly governed the photoresponse of the device. Our physical description of the bulk effect of photoresponsive insulators on the performance of OPTs will provide a useful guideline for designing and constructing high-performance organic-based photosensing devices and systems.

Enhanced Optical Switching Characteristics of Organic Phototransistor by Adopting Photo-Responsive Polymer in Hybrid Gate-Insulator Configuration.

In this study, we developed polymer gate insulator-based organic phototransistors (p-OPTs) with improved optical switching properties by using a hybrid gate insulator configuration. The hybrid gate insulator of our p-OPT has a photoresponsive layer made of poly(4-vinylphenol) (PVP), which enhances the photoresponse, and an interfacial layer of poly(methyl methacrylate) for reliable optical switching of the device. Our hybrid gate insulator-equipped p-OPT exhibits well-defined optical switching characteristics because no specific type of charge is significantly trapped at an interfacial layer/organic semiconductor (OSC) interface. Moreover, our device is more photoresponsive than the conventional p-OPT (here, an OPT with a single-polymer poly(methyl methacrylate) (PMMA) gate insulator), because the characteristic ultraviolet (UV) absorption of the PVP polymer allows the photoresponsive layer and OSC to contribute to the generation of charge carriers when exposed to UV light.

Achieving Weak Light Response with Plasmonic Nanogold-Decorated Organic Phototransistors.

Weak light response of organic photodetectors has fascinating potentials in fields of modern science and technology. However, their photoresponsivity is hindered by poor photocarrier excitation and transport. Decorating active-layer surface with plasmonic nanometals is considered a viable strategy to address this issue. Here, we demonstrate a plasmonic nanogold decorated organic phototransistor achieving remarkable enhancement of photoresponsivity. Meanwhile, the photoresponsive range is broadened by 4 orders of magnitude. The proposed design is substantiated by a schematic energy level model combined with theoretical simulation analysis, enabling the development of the advanced optoelectronics.

Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer.

A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 104 s between these two states with an on/off ratio of 104, and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.

Detecting 100 fW cm-2 Light with Trapped Electron Gated Organic Phototransistors.

Ultraweak light detection with solid-state and cooling-free photodetectors is important for both fundamental research and practical applications. A general phototransistor architecture for detecting ultraviolet-visible light down to 100 fW cm-2 at room temperature is demonstrated. The exceptional sensitivity stems from an amplification process triggered by incident light. A responsivity of ≈107 A W-1 is achieved.

Solution-Processed Flexible Organic Ferroelectric Phototransistor.

In this article, we demonstrate ferroelectric insulator, P(VDF-TrFE), can be integrated with red light sensitive polymeric semiconductor, P(DPP-TzBT), toward ferroelectric organic phototransistors (OPTs). This ferroelectricity-modulated phototransistor possesses different nonvolatile and tunable dark current states due to P(VDF-TrFE)'s remnant polarization. As a result, the OPT is endowed with a tunable dark current level ranging from 1 nA to 100 nA. Once the OPT is programmed or electrically polarized, its photo-to-dark (signal-to-noise) ratio can be "flexible" during photodetection process, without gate bias application. This kind of organic ferroelectric phototransistor has great potential in detecting wide ranges of light signals with good linearity. Moreover, its tuning mechanism discussed in this work can be helpful to understand the operation mechanism of organic phototransistor (OPT). It can be promising for novel photodetection application in plastic electronic devices.

Flexible Organic Phototransistor Array with Enhanced Responsivity via Metal-Ligand Charge Transfer.

Phototransistors based on organic photoactive materials combine tunable light absorption in the spectral region from ultraviolet to near-infrared with low-temperature processability over large areas on flexible substrates. However, they often exhibit low photoresponsivity because of low molar extinction coefficient of photoactive components. We report a simple, yet highly efficient solution method for enhancing the performance of organic phototransistors using ruthenium complex 1 (Ru-complex 1). An air-stable n-type organic semiconductor, N,N'-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI), has been deposited on a silicon wafer and a transparent polyimide (PI) substrate via thermal evaporation under vacuum. The BPE-PTCDI phototransistors functionalized with Ru-complex 1 exhibit ∼5000 times higher external quantum efficiency (EQE) than that of pristine BPE-PTCDI phototransistors, owing to the metal-ligand charge transfer (MLCT) from Ru-complex 1 to the active component of the device. In addition, a large 10 × 10 phototransistor array (2.5 × 2.5 cm(2)) has been prepared on a transparent PI substrate, showing distinct light mapping. The fabricated phototransistor array is highly flexible and twistable and works well under tensile and compressive strains. We believe that our simple method will pave a viable way for improvements in the photoresponsivity of organic semiconductors for applications in wearable organic optoelectronic devices.