Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures.
Nanotechnology
; 19(16): 165201, 2008 Apr 23.
Article
em En
| MEDLINE
| ID: mdl-21825635
ABSTRACT
Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/AlGaAs heterostructure. Quantum point contacts and (double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Ano de publicação:
2008
Tipo de documento:
Article