Crossing the insulator-to-metal barrier with a thiazyl radical conductor.
J Am Chem Soc
; 134(24): 9886-9, 2012 Jun 20.
Article
em En
| MEDLINE
| ID: mdl-22681388
ABSTRACT
The layered-sheet architecture of the crystal structure of the fluoro-substituted oxobenzene-bridged bisdithiazolyl radical FBBO affords a 2D π-electronic structure with a large calculated bandwidth. The material displays high electrical conductivity for a f = 1/2 system, with σ(300 K) = 2 × 10(-2) S cm(-1). While the conductivity is thermally activated at ambient pressure, with E(act) = 0.10 eV at 300 K, indicative of a Mott insulating state, E(act) is eliminated at 3 GPa, suggesting the formation of a metallic state. The onset of metallization is supported by infrared measurements, which show closure of the Mott-Hubbard gap above 3 GPa.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2012
Tipo de documento:
Article