Thin film complementary metal oxide semiconductor (CMOS) device using a single-step deposition of the channel layer.

Nayak, Pradipta K; Caraveo-Frescas, J A; Wang, Zhenwei; Hedhili, M N; Wang, Q X; Alshareef, H N

Nayak, Pradipta K; Caraveo-Frescas, J A; Wang, Zhenwei; Hedhili, M N; Wang, Q X; Alshareef, H N.

Afiliação

Nayak PK; Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Caraveo-Frescas JA; Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Wang Z; Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Hedhili MN; Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Wang QX; Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Alshareef HN; Materials Science and Engineering, King Abdullah University of Science & Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.

Sci Rep ; 4: 4672, 2014 Apr 14.

Article em En | MEDLINE | ID: mdl-24728223

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article