Nonvolatile resistance switching on two-dimensional electron gas.

Joung, Jin Gwan; Kim, Shin-Ik; Moon, Seon Young; Kim, Dai-Hong; Gwon, Hyo Jin; Hong, Seong-Hyeon; Chang, Hye Jung; Hwang, Jin-Ha; Kwon, Beom Jin; Kim, Seong Keun; Choi, Ji-Won; Yoon, Seok-Jin; Kang, Chong-Yun; Yoo, Kwang Soo; Kim, Jin-Sang; Baek, Seung-Hyub

Joung, Jin Gwan; Kim, Shin-Ik; Moon, Seon Young; Kim, Dai-Hong; Gwon, Hyo Jin; Hong, Seong-Hyeon; Chang, Hye Jung; Hwang, Jin-Ha; Kwon, Beom Jin; Kim, Seong Keun; Choi, Ji-Won; Yoon, Seok-Jin; Kang, Chong-Yun; Yoo, Kwang Soo; Kim, Jin-Sang; Baek, Seung-Hyub.

Afiliação

Joung JG; Electronic Materials Research Center, Korea Institute of Science and Technology , Seoul 136-791, Republic of Korea.

ACS Appl Mater Interfaces ; 6(20): 17785-91, 2014 Oct 22.

Article em En | MEDLINE | ID: mdl-25243475

Palavras-chave

complex oxide; heterointerface; nonvolatile memory; resistance switching; two-dimensional electron gas

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2014 Tipo de documento: Article