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Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air.
Fonseca, Jose J; Tongay, Sefaattin; Topsakal, Mehmet; Chew, Annabel R; Lin, Alan J; Ko, Changhyun; Luce, Alexander V; Salleo, Alberto; Wu, Junqiao; Dubon, Oscar D.
Afiliação
  • Fonseca JJ; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Tongay S; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Topsakal M; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Chew AR; Department of Chemical Engineering and Materials Science, University of Minnesota, MN, 55455, USA.
  • Lin AJ; Department of Materials Science and Engineering, Stanford University, Palo Alto, CA, 94305, USA.
  • Ko C; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Luce AV; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
  • Salleo A; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Wu J; Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
  • Dubon OD; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
Adv Mater ; 28(30): 6465-70, 2016 Aug.
Article em En | MEDLINE | ID: mdl-27171481
A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2016 Tipo de documento: Article