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Low Power Consumption Substrate-Emitting DFB Quantum Cascade Lasers.
Liu, Chuan-Wei; Zhang, Jin-Chuan; Jia, Zhi-Wei; Zhuo, Ning; Zhai, Shen-Qiang; Wang, Li-Jun; Liu, Jun-Qi; Liu, Shu-Man; Liu, Feng-Qi; Wang, Zhan-Guo.
Afiliação
  • Liu CW; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083, People's Republic of China.
  • Zhang JC; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408, People's Republic of China.
  • Jia ZW; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083, People's Republic of China. zhangjinchuan@semi.ac.cn.
  • Zhuo N; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083, People's Republic of China.
  • Zhai SQ; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408, People's Republic of China.
  • Wang LJ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083, People's Republic of China.
  • Liu JQ; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083, People's Republic of China.
  • Liu SM; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083, People's Republic of China.
  • Liu FQ; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 101408, People's Republic of China.
  • Wang ZG; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing, 100083, People's Republic of China.
Nanoscale Res Lett ; 12(1): 517, 2017 Sep 02.
Article em En | MEDLINE | ID: mdl-28866815
ABSTRACT
In the present work, an ultra-low power consumption substrate-emitting distributed feedback (DFB) quantum cascade laser (QCL) was developed. The continuous-wave (CW) threshold power dissipation is reduced to 0.43 W at 25 °C by shortening the cavity length to 0.5 mm and depositing high-reflectivity (HR) coating on both facets. As far as we know, this is the recorded threshold power dissipation of QCLs in the same conditions. Single-mode emission was achieved by employing a buried second-order grating. Mode-hop free emission can be observed within a wide temperature range from 15 to 105 °C in CW mode. The divergence angles are 22.5o and 1.94o in the ridge-width direction and cavity-length direction, respectively. The maximum optical power in CW operation was 2.4 mW at 25 °C, which is sufficient to spectroscopy applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article