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Atomic Configuration of Point Defect Clusters in Ion-Irradiated Silicon Carbide.
Lin, Y R; Chen, L G; Hsieh, C Y; Chang, M T; Fung, K Y; Hu, A; Lo, S C; Chen, F R; Kai, J J.
Afiliação
  • Lin YR; National Tsing-Hua University, Department of Engineering and System Science, 30013, Hsinchu, Taiwan.
  • Chen LG; National Tsing-Hua University, Department of Engineering and System Science, 30013, Hsinchu, Taiwan.
  • Hsieh CY; Industrial Technology Research Institute, Material and Chemical Research Laboratories, 31040, Hsinchu, Taiwan.
  • Chang MT; Industrial Technology Research Institute, Material and Chemical Research Laboratories, 31040, Hsinchu, Taiwan.
  • Fung KY; The City University of Hong Kong, Department of Mechanical and Biomedical Engineering, 852 Kowloon, Kowloon, Hong Kong.
  • Hu A; The City University of Hong Kong, Department of Mechanical and Biomedical Engineering, 852 Kowloon, Kowloon, Hong Kong.
  • Lo SC; Industrial Technology Research Institute, Material and Chemical Research Laboratories, 31040, Hsinchu, Taiwan.
  • Chen FR; National Tsing-Hua University, Department of Engineering and System Science, 30013, Hsinchu, Taiwan.
  • Kai JJ; National Tsing-Hua University, Department of Engineering and System Science, 30013, Hsinchu, Taiwan. jjkai34280@gmail.com.
Sci Rep ; 7(1): 14635, 2017 11 07.
Article em En | MEDLINE | ID: mdl-29116130
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2017 Tipo de documento: Article