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Vertical MoS2 Double-Layer Memristor with Electrochemical Metallization as an Atomic-Scale Synapse with Switching Thresholds Approaching 100 mV.
Xu, Renjing; Jang, Houk; Lee, Min-Hyun; Amanov, Dovran; Cho, Yeonchoo; Kim, Haeryong; Park, Seongjun; Shin, Hyeon-Jin; Ham, Donhee.
Afiliação
  • Xu R; School of Engineering and Applied Sciences , Harvard University , Cambridge , Massachusetts 02138 , United States.
  • Jang H; School of Engineering and Applied Sciences , Harvard University , Cambridge , Massachusetts 02138 , United States.
  • Lee MH; Samsung Advanced Institute of Technology , Samsung Electronics , Suwon 443-803 , South Korea.
  • Amanov D; School of Engineering and Applied Sciences , Harvard University , Cambridge , Massachusetts 02138 , United States.
  • Cho Y; Samsung Advanced Institute of Technology , Samsung Electronics , Suwon 443-803 , South Korea.
  • Kim H; Samsung Advanced Institute of Technology , Samsung Electronics , Suwon 443-803 , South Korea.
  • Park S; Samsung Advanced Institute of Technology , Samsung Electronics , Suwon 443-803 , South Korea.
  • Shin HJ; Samsung Advanced Institute of Technology , Samsung Electronics , Suwon 443-803 , South Korea.
  • Ham D; School of Engineering and Applied Sciences , Harvard University , Cambridge , Massachusetts 02138 , United States.
Nano Lett ; 19(4): 2411-2417, 2019 04 10.
Article em En | MEDLINE | ID: mdl-30896171
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article