Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe<sub>2</sub> Heterostructure.

Na, Junhong; Kim, Youngwook; Smet, Jurgen H; Burghard, Marko; Kern, Klaus

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe₂ Heterostructure.

Na, Junhong; Kim, Youngwook; Smet, Jurgen H; Burghard, Marko; Kern, Klaus.

Afiliação

Na J; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.
Kim Y; Department of Energy Science , Sungkyunkwan University , 16419 Suwon , Republic of Korea.
Smet JH; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.
Burghard M; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.
Kern K; Max Planck Institute for Solid State Research , Heisenbergstrasse 1 , D-70569 Stuttgart , Germany.

ACS Appl Mater Interfaces ; 11(23): 20973-20978, 2019 Jun 12.

Article em En | MEDLINE | ID: mdl-31145585

Palavras-chave

2D van der Waals heterostructure; black phosphorus; negative differential resistance; tin diselenide; tunneling transistor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article