Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature.

Yu, Byoung-Soo; Jeon, Jun-Young; Kang, Byeong-Cheol; Lee, Woobin; Kim, Yong-Hoon; Ha, Tae-Jun

Yu, Byoung-Soo; Jeon, Jun-Young; Kang, Byeong-Cheol; Lee, Woobin; Kim, Yong-Hoon; Ha, Tae-Jun.

Afiliação

Yu BS; Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Korea.
Jeon JY; Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Korea.
Kang BC; Department of Electronic Materials Engineering, Kwangwoon University, Seoul, 01897, Korea.
Lee W; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea.
Kim YH; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, Korea. yhkim76@skku.edu.
Ha TJ; School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Korea. yhkim76@skku.edu.

Sci Rep ; 9(1): 8416, 2019 Jun 10.

Article em En | MEDLINE | ID: mdl-31182751

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article