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Boost of single-photon emission by perfect coupling of InAs/GaAs quantum dot and micropillar cavity mode.
Li, Shulun; Chen, Yao; Shang, Xiangjun; Yu, Ying; Yang, Jiawei; Huang, Junhui; Su, Xiangbin; Shen, Jiaxin; Sun, Baoquan; Ni, Haiqiao; Su, Xingliang; Wang, Kaiyou; Niu, Zhichuan.
Afiliação
  • Li S; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083, China.
  • Chen Y; Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Shang X; Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
  • Yu Y; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083, China.
  • Yang J; Institute of Photonics and Photonic Technology, Northwest University, Xian, 710127, China.
  • Huang J; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083, China.
  • Su X; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China.
  • Shen J; State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China.
  • Sun B; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083, China.
  • Ni H; Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing, 100049, China.
  • Su X; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083, China.
  • Wang K; State Key Laboratory for Superlattice and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing, 100083, China.
  • Niu Z; School of Microelectronics, Xidian University and The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xian, 710071, China.
Nanoscale Res Lett ; 15(1): 145, 2020 Jul 09.
Article em En | MEDLINE | ID: mdl-32648067
We proposed a precise calibration process of Al 0.9Ga0.1As/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) intensity. Light-matter interaction of single QD in DBR micropillar cavity (Q ∼ 3800) under weak coupling regime was investigated by temperature-tuned PL spectra; a pronounced enhancement (14.6-fold) of QD exciton emission was observed on resonance. The second-order autocorrelation measurement shows g(2)(0)=0.070, and the estimated net count rate before the first objective lens reaches 1.6×107 counts/s under continuous wave excitation, indicating highly pure single-photon emission at high count rates.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article