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Few-Atomic-Layers Iron for Hydrogen Evolution from Water by Photoelectrocatalysis.
Zhou, Baowen; Ou, Pengfei; Rashid, Roksana Tonny; Vanka, Srinivas; Sun, Kai; Yao, Lin; Sun, Haiding; Song, Jun; Mi, Zetian.
Afiliação
  • Zhou B; Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109, USA.
  • Ou P; Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada.
  • Rashid RT; Department of Mining and Materials Engineering, McGill University, 3610 University Street, Montreal, QC H3A 0C5, Canada.
  • Vanka S; Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, QC H3A 0E9, Canada.
  • Sun K; Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, MI 48109, USA.
  • Yao L; Department of Materials Science and Engineering, University of Michigan, 2300 Hayward Street, Ann Arbor, MI 48109, USA.
  • Sun H; Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, 19 Zhongguancundonglu, Beijing 100190, P. R. China.
  • Song J; School of Microelectronics, University of Science and Technology of China, 244 Huangshan Road, Hefei, Anhui 230026, P. R. China.
  • Mi Z; Department of Mining and Materials Engineering, McGill University, 3610 University Street, Montreal, QC H3A 0C5, Canada.
iScience ; 23(10): 101613, 2020 Oct 23.
Article em En | MEDLINE | ID: mdl-33089102
ABSTRACT
The carbon-free production of hydrogen from water splitting holds grand promise for the critical energy and environmental challenges. Herein, few-atomic-layers iron (FeFAL) anchored on GaN nanowire arrays (NWs) is demonstrated as a highly active hydrogen evolution reaction catalyst, attributing to the spatial confinement and the nitrogen-terminated surface of GaN NWs. Based on density functional theory calculations, the hydrogen adsorption on FeFALGaN NWs is found to exhibit a significantly low free energy of -0.13 eV, indicative of high activity. Meanwhile, its outstanding optoelectronic properties are realized by the strong electronic coupling between atomic iron layers and GaN(10i0) together with the nearly defect-free GaN NWs. As a result, FeFALGaN NWs/n+-p Si exhibits a prominent current density of ∼ -30 mA cm-2 at an overpotential of ∼0.2 V versus reversible hydrogen electrode with a decent onset potential of +0.35 V and 98% Faradaic efficiency in 0.5 mol/L KHCO3 aqueous solution under standard one-sun illumination.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article