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Two-dimensional ferromagnetic superlattices.
Liu, Shanshan; Yang, Ke; Liu, Wenqing; Zhang, Enze; Li, Zihan; Zhang, Xiaoqian; Liao, Zhiming; Zhang, Wen; Sun, Jiabao; Yang, Yunkun; Gao, Han; Huang, Ce; Ai, Linfeng; Wong, Ping Kwan Johnny; Wee, Andrew Thye Shen; N'Diaye, Alpha T; Morton, Simon A; Kou, Xufeng; Zou, Jin; Xu, Yongbing; Wu, Hua; Xiu, Faxian.
Afiliação
  • Liu S; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Yang K; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Liu W; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Zhang E; Laboratory for Computational Physical Sciences (MOE), Fudan University, Shanghai 200433, China.
  • Li Z; Department of Electronic Engineering, Royal Holloway University of London, Egham TW20 0EX, UK.
  • Zhang X; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Liao Z; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Zhang W; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Sun J; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Yang Y; School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
  • Gao H; Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia.
  • Huang C; Department of Physics, National University of Singapore, Singapore 117542, Singapore.
  • Ai L; Department of Electronic Engineering, Royal Holloway University of London, Egham TW20 0EX, UK.
  • Wong PKJ; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Wee ATS; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • N'Diaye AT; Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia.
  • Morton SA; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Kou X; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Zou J; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Xu Y; Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China.
  • Wu H; Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore 117546, Singapore.
  • Xiu F; Department of Physics, National University of Singapore, Singapore 117542, Singapore.
Natl Sci Rev ; 7(4): 745-754, 2020 Apr.
Article em En | MEDLINE | ID: mdl-34692093
Mechanically exfoliated two-dimensional ferromagnetic materials (2D FMs) possess long-range ferromagnetic order and topologically nontrivial skyrmions in few layers. However, because of the dimensionality effect, such few-layer systems usually exhibit much lower Curie temperature (T C) compared to their bulk counterparts. It is therefore of great interest to explore effective approaches to enhance their T C, particularly in wafer-scale for practical applications. Here, we report an interfacial proximity-induced high-T C 2D FM Fe3GeTe2 (FGT) via A-type antiferromagnetic material CrSb (CS) which strongly couples to FGT. A superlattice structure of (FGT/CS)n, where n stands for the period of FGT/CS heterostructure, has been successfully produced with sharp interfaces by molecular-beam epitaxy on 2-inch wafers. By performing elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally discovered that T C of 4-layer Fe3GeTe2 can be significantly enhanced from 140 K to 230 K because of the interfacial ferromagnetic coupling. Meanwhile, an inverse proximity effect occurs in the FGT/CS interface, driving the interfacial antiferromagnetic CrSb into a ferrimagnetic state as evidenced by double-switching behavior in hysteresis loops and the XMCD spectra. Density functional theory calculations show that the Fe-Te/Cr-Sb interface is strongly FM coupled and doping of the spin-polarized electrons by the interfacial Cr layer gives rise to the T C enhancement of the Fe3GeTe2 films, in accordance with our XMCD measurements. Strikingly, by introducing rich Fe in a 4-layer FGT/CS superlattice, T C can be further enhanced to near room temperature. Our results provide a feasible approach for enhancing the magnetic order of few-layer 2D FMs in wafer-scale and render opportunities for realizing realistic ultra-thin spintronic devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article