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Localized surface plasmon resonance-enhanced solar-blind Al0.4Ga0.6N MSM photodetectors exhibiting high-temperature robustness.
Kaushik, Shuchi; Karmakar, Subhajit; Bisht, Prashant; Liao, Che-Hao; Li, Xiaohang; Varshney, Ravendra Kumar; Mehta, Bodh Raj; Singh, Rajendra.
Afiliação
  • Kaushik S; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • Karmakar S; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • Bisht P; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • Liao CH; Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Li X; Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
  • Varshney RK; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • Mehta BR; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • Singh R; Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
Nanotechnology ; 33(14)2022 Jan 12.
Article em En | MEDLINE | ID: mdl-34902849
ABSTRACT
The appealing properties of tunable direct wide bandgap, high-temperature robustness and chemical hardness, make AlxGa1-xN a promising candidate for fabricating robust solar-blind photodetectors (PDs). In this work, we have utilized the optical phenomenon of localized surface plasmon resonance (LSPR) in metal nanoparticles (NPs) to significantly enhance the performance of solar-blind Al0.4Ga0.6N metal-semiconductor-metal PDs that exhibit high-temperature robustness. We demonstrate that the presence of palladium (Pd) NPs leads to a remarkable enhancement by nearly 600, 300, and 462%, respectively, in the photo-to-dark current ratio (PDCR), responsivity, and specific detectivity of the Al0.4Ga0.6N PD at the wavelength of 280 nm. Using the optical power density of only 32µW cm-2at -10 V, maximum values of ∼3 × 103, 2.7 AW-1, and 2.4 × 1013Jones are found for the PDCR, responsivity and specific detectivity, respectively. The experimental observations are supported by finite difference time domain simulations, which clearly indicate the presence of LSPR in Pd NPs decorated on the surface of Al0.4Ga0.6N. The mechanism behind the enhancement is investigated in detail, and is ascribed to the LSPR induced effects, namely, improved optical absorption, enhanced local electric field and LSPR sensitization effect. Moreover, the PD exhibits a stable operation up to 400 K, thereby exhibiting the high-temperature robustness desirable for commercial applications.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article