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Raman Spectroscopy as a Simple yet Effective Analytical Tool for Determining Fermi Energy and Temperature Dependent Fermi Shift in Silicon.
Rani, Chanchal; Tanwar, Manushree; Ghosh, Tanushree; Kandpal, Suchita; Pathak, Devesh K; Chaudhary, Anjali; Yogi, Priyanka; Saxena, Shailendra K; Kumar, Rajesh.
Afiliação
  • Rani C; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India.
  • Tanwar M; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India.
  • Ghosh T; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India.
  • Kandpal S; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India.
  • Pathak DK; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India.
  • Chaudhary A; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
  • Yogi P; Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany.
  • Saxena SK; Department of Chemistry, University of Alberta, Edmonton T6G 2G2, Canada.
  • Kumar R; Materials and Device Laboratory, Department of Physics, Indian Institute of Technology Indore, Simrol 453552, India.
Anal Chem ; 94(3): 1510-1514, 2022 Jan 25.
Article em En | MEDLINE | ID: mdl-34994546
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article