Your browser doesn't support javascript.
loading
Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film.
Cheng, Yan; Gao, Zhaomeng; Ye, Kun Hee; Park, Hyeon Woo; Zheng, Yonghui; Zheng, Yunzhe; Gao, Jianfeng; Park, Min Hyuk; Choi, Jung-Hae; Xue, Kan-Hao; Hwang, Cheol Seong; Lyu, Hangbing.
Afiliação
  • Cheng Y; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 500 Dongchuan Road, 200241, Shanghai, China.
  • Gao Z; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Bei-tu-cheng West Road, Chaoyang District, 100029, Beijing, China.
  • Ye KH; University of Chinese Academy of Sciences, 100049, Beijing, China.
  • Park HW; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, 08826, Seoul, Republic of Korea.
  • Zheng Y; Electronic Materials Research Center, Korea Institute of Science and Technology, 02792, Seoul, Republic of Korea.
  • Zheng Y; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, 08826, Seoul, Republic of Korea.
  • Gao J; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 500 Dongchuan Road, 200241, Shanghai, China.
  • Park MH; Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, 500 Dongchuan Road, 200241, Shanghai, China.
  • Choi JH; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, No. 3 Bei-tu-cheng West Road, Chaoyang District, 100029, Beijing, China.
  • Xue KH; Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, 08826, Seoul, Republic of Korea.
  • Hwang CS; School of Materials Science and Engineering, College of Engineering, Pusan National University, Busandaehak-ro 63beon-gil 2, Geumjeong-gu, 46241, Busan, Republic of Korea.
  • Lyu H; Electronic Materials Research Center, Korea Institute of Science and Technology, 02792, Seoul, Republic of Korea.
Nat Commun ; 13(1): 645, 2022 Feb 03.
Article em En | MEDLINE | ID: mdl-35115504
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article