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Selective etching of silicon nitride over silicon oxide using ClF3/H2 remote plasma.
Lee, Won Oh; Kim, Ki Hyun; Kim, Doo San; Ji, You Jin; Kang, Ji Eun; Tak, Hyun Woo; Park, Jin Woo; Song, Han Dock; Kim, Ki Seok; Cho, Byeong Ok; Kim, Young Lae; Yeom, Geun Young.
Afiliação
  • Lee WO; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
  • Kim KH; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
  • Kim DS; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
  • Ji YJ; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
  • Kang JE; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
  • Tak HW; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
  • Park JW; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
  • Song HD; Research and Development Group, Wonik Materials Co. Ltd., Cheongju, 28125, Republic of Korea.
  • Kim KS; Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
  • Cho BO; Research and Development Group, Wonik Materials Co. Ltd., Cheongju, 28125, Republic of Korea.
  • Kim YL; Research and Development Group, Wonik Materials Co. Ltd., Cheongju, 28125, Republic of Korea.
  • Yeom GY; School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do, 16419, Republic of Korea. gyyeom@skku.edu.
Sci Rep ; 12(1): 5703, 2022 Apr 05.
Article em En | MEDLINE | ID: mdl-35383214
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article