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Composition and phase engineering of metal chalcogenides and phosphorous chalcogenides.
Zhou, Jiadong; Zhu, Chao; Zhou, Yao; Dong, Jichen; Li, Peiling; Zhang, Zhaowei; Wang, Zhen; Lin, Yung-Chang; Shi, Jia; Zhang, Runwu; Zheng, Yanzhen; Yu, Huimei; Tang, Bijun; Liu, Fucai; Wang, Lin; Liu, Liwei; Liu, Gui-Bin; Hu, Weida; Gao, Yanfeng; Yang, Haitao; Gao, Weibo; Lu, Li; Wang, Yeliang; Suenaga, Kazu; Liu, Guangtong; Ding, Feng; Yao, Yugui; Liu, Zheng.
Afiliação
  • Zhou J; Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China. jdzhou@bit.edu.cn.
  • Zhu C; Chongqing Center for Microelectronics and Microsystems, Beijing Institute of Technology, Chongqing, People's Republic of China. jdzhou@bit.edu.cn.
  • Zhou Y; School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
  • Dong J; SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, People's Republic of China.
  • Li P; Advanced Research Institute of Multidisciplinary Science, and School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, People's Republic of China.
  • Zhang Z; Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, Republic of Korea.
  • Wang Z; Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, People's Republic of China.
  • Lin YC; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.
  • Shi J; School of Physical and Mathematical Science, Nanyang Technological University, Singapore, Singapore.
  • Zhang R; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, People's Republic of China.
  • Zheng Y; The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan.
  • Yu H; Department of Chemistry, National University of Singapore, Singapore, Singapore.
  • Tang B; Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
  • Liu F; Beijing Key Laboratory of Green Recovery and Extraction of Rare and Precious Metals, University of Science and Technology Beijing, Beijing, People's Republic of China.
  • Wang L; School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, People's Republic of China.
  • Liu L; School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
  • Liu GB; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, People's Republic of China.
  • Hu W; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, People's Republic of China.
  • Gao Y; School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, People's Republic of China.
  • Yang H; Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, China.
  • Gao W; State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, People's Republic of China.
  • Lu L; School of Materials Science and Engineering, Shanghai University, Shanghai, People's Republic of China.
  • Wang Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.
  • Suenaga K; School of Physical and Mathematical Science, Nanyang Technological University, Singapore, Singapore.
  • Liu G; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, People's Republic of China.
  • Ding F; Songshan Lake Materials Laboratory, Guangdong, China.
  • Yao Y; School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, People's Republic of China. yeliang.wang@bit.edu.cn.
  • Liu Z; The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan.
Nat Mater ; 22(4): 450-458, 2023 Apr.
Article em En | MEDLINE | ID: mdl-35739274
Two-dimensional (2D) materials with multiphase, multielement crystals such as transition metal chalcogenides (TMCs) (based on V, Cr, Mn, Fe, Cd, Pt and Pd) and transition metal phosphorous chalcogenides (TMPCs) offer a unique platform to explore novel physical phenomena. However, the synthesis of a single-phase/single-composition crystal of these 2D materials via chemical vapour deposition is still challenging. Here we unravel a competitive-chemical-reaction-based growth mechanism to manipulate the nucleation and growth rate. Based on the growth mechanism, 67 types of TMCs and TMPCs with a defined phase, controllable structure and tunable component can be realized. The ferromagnetism and superconductivity in FeXy can be tuned by the y value, such as superconductivity observed in FeX and ferromagnetism in FeS2 monolayers, demonstrating the high quality of as-grown 2D materials. This work paves the way for the multidisciplinary exploration of 2D TMPCs and TMCs with unique properties.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article