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Strong Anharmonicity-Induced Low Thermal Conductivity and High n-type Mobility in the Topological Insulator Bi1.1 Sb0.9 Te2 S.
Pathak, Riddhimoy; Dutta, Prabir; Srivastava, Ashutosh; Rawat, Divya; Gopal, Radha Krishna; Singh, Abhishek K; Soni, Ajay; Biswas, Kanishka.
Afiliação
  • Pathak R; New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O., Bangalore, 560064, India.
  • Dutta P; New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O., Bangalore, 560064, India.
  • Srivastava A; Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India.
  • Rawat D; School of Basic Sciences, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh, 175005, India.
  • Gopal RK; New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O., Bangalore, 560064, India.
  • Singh AK; Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India.
  • Soni A; School of Basic Sciences, Indian Institute of Technology Mandi, Mandi, Himachal Pradesh, 175005, India.
  • Biswas K; New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O., Bangalore, 560064, India.
Angew Chem Int Ed Engl ; 61(41): e202210783, 2022 Oct 10.
Article em En | MEDLINE | ID: mdl-35971950
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article