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Large-area flexible colloidal-quantum-dot infrared photodiodes for photoplethysmogram signal measurements.
Liang, Xinyi; Liu, Yuxuan; Liu, Peilin; Yang, Junrui; Liu, Jing; Yang, Yang; Wang, Bo; Hu, Jun; Zhang, Linxiang; Yang, Gaoyuan; Lu, Shuaicheng; Liang, Guijie; Lan, Xinzheng; Zhang, Jianbing; Gao, Liang; Tang, Jiang.
Afiliação
  • Liang X; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Liu Y; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Liu P; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Yang J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Liu J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Yang Y; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Wang B; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Hu J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Zhang L; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
  • Yang G; Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang 441053, China.
  • Lu S; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong Universit
  • Liang G; Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang 441053, China.
  • Lan X; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China.
  • Zhang J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou 325006, Ch
  • Gao L; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China; Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong Universit
  • Tang J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China; Optics Valley Laboratory, Wuhan 430074, China.
Sci Bull (Beijing) ; 68(7): 698-705, 2023 Apr 15.
Article em En | MEDLINE | ID: mdl-36931915
Epitaxially grown photodiodes are the foundation of infrared photodetection technology; however, their rigid structure and limited area scaling limit their use in advanced applications. Colloidal-quantum-dot (CQD) infrared photodiodes have increased active areas through solution processing, and are thus potential candidates for large-area flexible photodetection, but these large-area photodiodes have disadvantages such as large dark current density, poor homogeneity, and poor stability. Therefore, this study established a fabrication strategy for large-area flexible CQD photodiodes that involves introducing polyimide to CQD ink to improve CQD passivation, monodisperse ink persistence, and film morphology. The resulting CQD photodiodes exhibited reduced dark current density and improved homogeneity and work stability. Furthermore, the as-prepared photodiodes exhibited a detectivity (D*) of greater than 1013 Jones, which was higher than other reported CQD photodetectors. The CQD photodiodes developed in this study can be used for wearable photoplethysmogram (PPG) signal measurement under ambient light at reduced cost and power consumption.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article