Enhancing the Plasma-Resistance Properties of Li2O-Al2O3-SiO2 Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation.

Kim, So-Won; Lee, Hwan-Seok; Jun, Deok-Sung; Lee, Seong-Eui; Lee, Joung-Ho; Lee, Hee-Chul

Enhancing the Plasma-Resistance Properties of Li₂O-Al₂O₃-SiO₂ Glasses for the Semiconductor Etch Process via Alkaline Earth Oxide Incorporation.

Kim, So-Won; Lee, Hwan-Seok; Jun, Deok-Sung; Lee, Seong-Eui; Lee, Joung-Ho; Lee, Hee-Chul.

Afiliação

Kim SW; Department of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Lee HS; Department of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Jun DS; Department of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Lee SE; Department of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
Lee JH; Korea Evaluation Institute of Industrial Technology, Seoul 06152, Republic of Korea.
Lee HC; Department of Advanced Materials Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.

Materials (Basel) ; 16(14)2023 Jul 20.

Article em En | MEDLINE | ID: mdl-37512386

Palavras-chave

LAS glass; alkaline earth oxide; low coefficient of thermal expansion; low dielectric constant; nonvolatile fluoride; plasma resistant glass; semiconductor etch process

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article