Improving the optoelectronic properties of monolayer MoS<sub>2</sub>field effect transistor through dielectric engineering.

Vrinda Narayanan, P; Majumder, Sudipta; Gokul, M A; Taneja, Chetna; Kumar, G V Pavan; Rahman, Atikur

Improving the optoelectronic properties of monolayer MoS₂field effect transistor through dielectric engineering.

Vrinda Narayanan, P; Majumder, Sudipta; Gokul, M A; Taneja, Chetna; Kumar, G V Pavan; Rahman, Atikur.

Afiliação

Vrinda Narayanan P; Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India.
Majumder S; Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India.
Gokul MA; Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India.
Taneja C; Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India.
Kumar GVP; Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India.
Rahman A; Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India.

Nanotechnology ; 34(50)2023 Oct 11.

Article em En | MEDLINE | ID: mdl-37708882

Palavras-chave

2D materials; dielectric screening; mobility enhancement; photoresponse relaxation

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article