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Probing charge traps at the 2D semiconductor/dielectric interface.
John, John Wellington; Mishra, Abhishek; Debbarma, Rousan; Verzhbitskiy, Ivan; Goh, Kuan Eng Johnson.
Afiliação
  • John JW; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore. kejgoh@yahoo.com.
  • Mishra A; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore. kejgoh@yahoo.com.
  • Debbarma R; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore. kejgoh@yahoo.com.
  • Verzhbitskiy I; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore. kejgoh@yahoo.com.
  • Goh KEJ; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore. kejgoh@yahoo.com.
Nanoscale ; 15(42): 16818-16835, 2023 Nov 02.
Article em En | MEDLINE | ID: mdl-37842965

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article