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Controlling the spin current around the rectangular cavities in two-dimensional topological insulators.
Gao, Xiang; Ma, Cheng; Li, Lei; Zhang, Xiaowei; Deng, Zhihong; Li, Xu; Zhou, Zigang.
Afiliação
  • Gao X; Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
  • Ma C; Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
  • Li L; College of Physics and Electronic Information, Sichuan University of Science and Engineering, Yibin 644000, China. lilei78@ustc.edu.cn.
  • Zhang X; State Key Laboratory of Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China.
  • Deng Z; Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
  • Li X; Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
  • Zhou Z; Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China.
Phys Chem Chem Phys ; 26(4): 3597-3604, 2024 Jan 24.
Article em En | MEDLINE | ID: mdl-38214895
ABSTRACT
Controlling spin current in topological insulators (TIs) is a crucial requirement for applications in quantum computing and spintronics. Using the non-equilibrium Keldysh Green's function formalism, we demonstrate that such control can be established around rectangular cavities of two-dimensional TIs by breaking their time reversal symmetry via exchange magnetic fields and magnetic defects. In the presence of magnetic defects with xy symmetry or Ising symmetry, the density of states is localized, and the spin current forms a current loop around the rectangular cavity in TIs interfacing with two ferromagnetic stripes. We also observe that the spin direction of the traveling electrons is inverted under the reversal of bias and gate voltages. The change in the spin-polarized current around the cavities is predicted by varying the strength of Rashba spin-orbit coupling. This result allows for the creation and control of nearly fully spin-polarized currents with various spatial patterns around the cavities in TIs, and the design of tunable spin diodes for highly integrated spintronics.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article