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Understanding Quasi-Static and Dynamic Characteristics of Organic Ferroelectric Field Effect Transistors.
Ke, Hanjing; Liang, Xiaoci; Yin, Xiaozhe; Liu, Baiquan; Han, Songjia; Jiang, Shijie; Liu, Chuan; She, Xiaojian.
Afiliação
  • Ke H; School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • Liang X; School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • Yin X; Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China.
  • Liu B; School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • Han S; College of Electronic Engineering, South China Agricultural University, Guangzhou 510642, China.
  • Jiang S; College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China.
  • Liu C; School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China.
  • She X; College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China.
Micromachines (Basel) ; 15(4)2024 Mar 29.
Article em En | MEDLINE | ID: mdl-38675278
ABSTRACT
Leveraging poly(vinylidene fluoride-trifluoroethylene) [(PVDF-TrFE)] as the dielectric, we fabricated organic ferroelectric field-effect transistors (OFe-FETs). These devices demonstrate quasi-static transfer characteristics that include a hysteresis window alongside transient phenomena that bear resemblance to synaptic plasticity-encapsulating excitatory postsynaptic current (EPSC) as well as both short-term and long-term potentiation (STP/LTP). We also explore and elucidate other aspects such as the subthreshold swing and the hysteresis window under dynamic state by varying the pace of voltage sweeps. In addition, we developed an analytical model that describes the electrical properties of OFe-FETs, which melds an empirical formula for ferroelectric polarization with a compact model. This model agrees well with the experimental data concerning quasi-static transfer characteristics, potentially serving as a quantitative tool to improve the understanding and design of OFe-FETs.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article