ScN/GaN(11Ì
00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures.
Nano Lett
; 24(21): 6233-6239, 2024 May 29.
Article
em En
| MEDLINE
| ID: mdl-38758973
ABSTRACT
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN(11Ì
00) surface. To this end, ScN is grown on freestanding GaN(11Ì
00) substrates and self-assembled GaN nanowires exhibiting (11Ì
00) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]â¥GaN(11Ì
00)[0001], providing a congruent, low-symmetry interface. The 13.1% uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a near-coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN(11Ì
00) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures including closely lattice-matched GaN, ScN, HfN, and ZrN compounds.
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01-internacional
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MEDLINE
Idioma:
En
Ano de publicação:
2024
Tipo de documento:
Article