Your browser doesn't support javascript.
loading
Generation of out-of-plane polarized spin current by non-uniform oxygen octahedral tilt/rotation.
Han, Furong; Zhang, Jing; Yang, Fan; Li, Bo; He, Yu; Li, Guansong; Chen, Youxiang; Jiang, Qisheng; Huang, Yan; Zhang, Hui; Zhang, Jine; Yang, Huaiwen; Liu, Huiying; Zhang, Qinghua; Wu, Hao; Chen, Jingsheng; Zhao, Weisheng; Sheng, Xian-Lei; Sun, Jirong; Zhang, Yue.
Afiliação
  • Han F; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Zhang J; Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, P. R. China.
  • Yang F; School of Physics, Beihang University, 100191, Beijing, P. R. China.
  • Li B; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • He Y; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Li G; Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
  • Chen Y; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Jiang Q; Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, P. R. China.
  • Huang Y; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Zhang H; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Zhang J; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Yang H; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Liu H; School of Physics, Beihang University, 100191, Beijing, P. R. China.
  • Zhang Q; Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, P. R. China.
  • Wu H; Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, P. R. China.
  • Chen J; Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore.
  • Zhao W; Fert Beijing Research Institute, National Key Lab of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, 100191, Beijing, P. R. China.
  • Sheng XL; School of Physics, Beihang University, 100191, Beijing, P. R. China. xlsheng@buaa.edu.cn.
  • Sun J; Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, P. R. China. jrsun@iphy.ac.cn.
  • Zhang Y; Spintronics Institute, Jinan University, 250022, Jinan, Shandong, P. R. China. jrsun@iphy.ac.cn.
Nat Commun ; 15(1): 7299, 2024 Aug 24.
Article em En | MEDLINE | ID: mdl-39181897
ABSTRACT
The free-field switching of the perpendicular magnetization by the out-of-plane polarized spin current induced spin-orbit torque makes it a promising technology for developing high-density memory and logic devices. The materials intrinsically with low symmetry are generally utilized to generate the spin current with out-of-plane spin polarization. However, the generation of the out-of-plane polarized spin current by engineering the symmetry of materials has not yet been reported. Here, we demonstrate that paramagnetic CaRuO3 films are able to generate out-of-plane polarized spin current by engineering the crystal symmetry. The non-uniform oxygen octahedral tilt/rotation along film's normal direction induced by oxygen octahedral coupling near interface breaks the screw-axis and glide-plane symmetries, which gives rise to a significant out-of-plane polarized spin current. This spin current can drive field-free spin-orbit torque switching of perpendicular magnetization with high efficiency. Our results offer a promising strategy based on crystal symmetry design to manipulate spin current and could have potential applications in advanced spintronic devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article