Concentration effects on spontaneous and amplified emission in benzo[c]fluorenes.

Deep-blue-emitting benzo[c]fluorene-cored compounds featuring twisted peripheral moieties for suppressed concentration quenching of emission were synthesized and investigated as potential materials for light amplification. This detailed study of the effect of concentration on the spontaneous and stimulated emission, excited-state lifetime and susceptibility to form aggregates obtained for different benzofluorenes, has enabled the understanding of the concentration dependence of the amplified spontaneous emission (ASE) threshold and revealed the optimal concentration for the lowest threshold. The weak concentration quenching accompanied by high fluorescence quantum yield (>40%) and radiative decay rate (>5 × 10(8) s(-1)) have enabled the attainment of the lowest ASE threshold in the neat amorphous film of benzofluorene bearing dihexylfluorenyl peripheral moieties. Aggregate formation was found to negligibly affect the emission efficiency of the benzofluorene films; however, it drastically increased ASE threshold via the enhanced scattering of directional stimulated emission, and thereby implied the necessity to utilize homogeneous glassy films as the lasing medium. Although the bulky dihexylfluorenyl groups at the periphery ensured the formation of glassy benzofluorene films with the ASE threshold as low as 900 W cm(-2) (under nanosecond excitation), they adversely affected carrier drift mobility, which implied a tradeoff between ASE and charge transport properties for the lasing materials utilized in the neat form. Such a low ASE threshold attained in air is among the lowest reported for solution-processed neat films. The low threshold and enhanced photostability of benzofluorenes against fluorene compounds in air show great potential for benzofluorene-cored molecular glasses as active media for lasing applications.

Non-symmetric 9,10-diphenylanthracene-based deep-blue emitters with enhanced charge transport properties.

Realization of efficient deep-blue anthracene-based emitters with superior film-forming and charge transport properties is challenging. A series of non-symmetric 9,10-diphenylanthracenes (DPA) with phenyl and pentyl moieties at the 2nd position and alkyl groups at para positions of the 9,10-phenyls were synthesized and investigated. The non-symmetric substitution at the 2nd position enabled to improve film forming properties as compared to those of the unsubstituted DPA and resulted in glass transition temperatures of up to 92 °C. Small-sized and poorly conjugated substituents allowed to preserve emission in the deep blue range (<450 nm). Substitution at the 2nd position enabled to achieve high fluorescence quantum yields (up to 0.7 in solution, and up to 0.9 in the polymer host), although it caused an up to 10-fold increase in the intersystem crossing rate as compared to that of the unsubstituted DPA. Further optimization of the film forming properties achieved by varying the length of the alkyl groups attached at the 9,10-phenyls enabled to attain very high hole drift mobilities (∼5 × 10(-3)-1 × 10(-2) cm(2) V(-1) s(-1)) in the solution-processed amorphous films of the DPA compounds.

Low-Threshold Light Amplification in Bifluorene Single Crystals: Role of the Trap States.

Organic single crystals (SCs) expressing long-range periodicity and dense molecular packing are an attractive amplifying medium for the realization of electrically driven organic lasers. However, the amplified spontaneous emission (ASE) threshold (1-10 kW/cm2) of SCs is still significantly higher compared to those of amorphous neat or doped films. The current study addresses this issue by investigating ASE properties of rigid bridging group-containing bifluorene SCs. Introduction of the rigid bridges in bifluorenes enables considerable reduction of nonradiative decay, which, along with enhanced fluorescence quantum yield (72-82%) and short excited state lifetime (1.5-2.5 ns), results in high radiative decay rates (∼0.5 × 109 s-1) of the SCs, making them highly attractive for lasing applications. The revealed ASE threshold of 400 W/cm2 in acetylene-bridged bifluorene SCs is found to be among the lowest ever reported for organic crystals. Ultrafast transient absorption spectroscopy enabled one to disclose pronounced differences in the excited state dynamics of the studied SCs, pointing out the essential role of radiative traps in achieving a record low ASE threshold. Although the origin of the trap states was not completely unveiled, the obtained results clearly evidence that the crystal doping approach can be successful in achieving extremely low ASE thresholds required for electrically pumped organic laser.