Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

Young's modulus and indirect morphological analysis of Bi2Se3 nanoribbons by resonance measurements.

An electrostatically induced resonance behaviour of individual topological insulator Bi2Se3 nanoribbons grown by a catalyst free vapour-solid synthesis was studied in situ by scanning electron microscopy. It was demonstrated that the relation between the resonant frequencies of vibrations in orthogonal planes can be applied to distinguish the nanoribbons with rectangular cross-sections from the nanoribbons having step-like morphology (terraces). The average Young's modulus of the Bi2Se3 nanoribbons with rectangular cross-sections was found to be 44 ± 4 GPa.

Correlation analysis of vibration modes in physical vapour deposited Bi2Se3 thin films probed by the Raman mapping technique.

In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi2Se3 thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2 g) and out-of-plane (A2 1g) Raman mode positions. For Bi2Se3 films deposited on quartz, experimental datapoints are scattered along the line with a slope of ∼0.85, related to the distribution of hydrostatic strain. In contrast to quartz/Bi2Se3 samples, for graphene/Bi2Se3 heterostructures with the same thicknesses, an additional negative slope of ∼-0.85, which can be associated with the distribution of the in-plane (a-b) biaxial tensile strain due to the film-substrate lattice mismatch, is observed. The algorithm of phonon deformation potential (PDP) calculation based on the proposed strain analysis for the 3 nm thick Bi2Se3 film deposited on the graphene substrate, where the strain is considered to be coherent across the thickness, is demonstrated. The PDPs for biaxial in-plane strain of the Bi2Se3 3 nm film in in-plane and out-of-plane modes are equal to -7.64 cm-1/% and -6.97 cm-1/%, respectively.

Two-terminal nanoelectromechanical bistable switches based on molybdenum-sulfur-iodine molecular wire bundles.

We demonstrate the application of Mo(6)S(3)I(6) molecular wire bundles for electrically controllable two-terminal on-off switches. We investigate how changes in the contact electrode material and geometry influence the device characteristics, hysteretic switching behavior and device stability. We also determine the device operating parameters, particularly the Young's moduli (40-270 GPa), operating current densities (3.2 x 10(5)-7 x 10(6) A m(-2)) and force constants. Although qualitatively, the properties of Mo(6)S(3)I(6) nanowires in nanoelectromechanical (NEM) switches are similar to those of carbon nanotubes (CNTs), their lower friction coefficient, higher mechanical stability and higher operation voltages give specific advantages in terms of smaller differences in on-off operating potentials, higher switching speeds and lower energy consumption than CNTs, which are critical for applications in NEM devices.

Catalyst-free vapour-solid technique for deposition of Bi2Te3 and Bi2Se3 nanowires/nanobelts with topological insulator properties.

We present a simple two-stage vapour-solid synthesis method for the growth of bismuth chalcogenide (Bi2Te3, Bi2Se3) topological insulator nanowires/nanobelts by using Bi2Se3 or Bi2Te3 powders as source materials. During the first stage of the synthesis process nanoplateteles, serving as "catalysts" for further nanowire/nanobelt growth, are formed. At a second stage of the synthesis, the introduction of a N2 flow at 35 Torr pressure in the chamber induces the formation of free standing nanowires/nanobelts. The synthesised nanostructures demonstrate a layered single-crystalline structure and Bi : Se and Bi : Te ratios 40 : 60 at% for both Bi2Se3 and Bi2Te3 nanowires/nanobelts. The presence of Shubnikov de Haas oscillations in the longitudinal magneto-resistance of the nanowires/nanobelts and their specific angular dependence confirms the existence of 2D topological surface states in the synthesised nanostructures.