RESUMEN
This paper presents a fully integrated PVDF-on-silicon pyroelectric sensor array. The pyroelectric sensor has two main features: a subpixel low noise charge amplifier and a self-absorbing layered structure. The integrated low noise charge amplifier is implemented in a standard CMOS process technology. It is located directly under the sensing structure, maximizing the pixel fill factor. The self-absorbing pyroelectric sensor is a three-layer stack, consisting of a conductive polymer as an absorber layer and front electrode, a thin PVDF film as the pyroelectric material, and a rear metal layer acting as a reflector layer and rear electrode. The manufacture of the pyroelectric sensor array requires five maskless post-CMOS processing steps and is compatible with any n-well, double metal, double polysilicon, CMOS process. The array has an average pixel voltage sensitivity of 2200 V/W at 100 Hz, an NEP of 2.4/spl times/10/sup -11/ W//spl radic/Hz at 100 Hz, and a specific detectivity of 4.4/spl times/10/sup 8/ cm /spl radic/Hz/W at 100 Hz.
RESUMEN
A new type of imaging microlens, primarily for use with solid-state image-capture systems such as a charge coupled device (CCD) or metal oxide semiconductor array sensors, is described. The design, having less aberration than conventional lenses of similar specification, is particularly advantageous in wide-angle, low-light applications. The lens type is substantially simpler than any existing design. A particular example, a fixed focus f/3.5 lens with a 90° field of view and a depth of field from 2 cm to infinity, is detailed. The lens can be directly bonded to a solid-state array detector and requires no other mechanical support. The lens can be designed and manufactured at low cost and has current applications in surveillance and microscopy.