Electrode and Electrolyte Co-Energy-Storage Electrochemistry Enables High-Energy Zn-S Decoupled Batteries.

In the search for next-generation green energy storage solutions, Cu-S electrochemistry has recently gained attraction from the battery community owing to its affordability and exceptionally high specific capacity of 3350 mAh gs -1. However, the inferior conductivity and substantial volume expansion of the S cathode hinder its cycling stability, while the low output voltage limits its energy density. Herein, a hollow carbon sphere (HCS) is synthesized as a 3D conductive host to achieve a stable S@HCS cathode, which enables an outstanding cycling performance of 2500 cycles (over 9 months). To address the latter, a Zn//S@HCS alkaline-acid decoupled cell is configured to increase the output voltage from 0.18 to 1.6 V. Moreover, an electrode and electrolyte co-energy storage mechanism is proposed to offset the reduction in energy density resulting from the extra electrolyte required in Zn//S decoupled cells. When combined, the Zn//S@HCS alkaline-acid decoupled cell delivers a record energy density of 334 Wh kg-1 based on the mass of the S cathode and CuSO4 electrolyte. This work tackles the key challenges of Cu-S electrochemistry and brings new insights into the rational design of decoupled batteries.

Responsive Microgels through RAFT-HDA Dynamic Covalent Bonding Chemistry.

This paper developed a method for preparing ultrasound-responsive microgels based on reversible addition fragmentation chain transfer-hetero Diels-Alder (RAFT-HAD) dynamic covalent bonding. First, a styrene cross-linked network was successfully prepared by a Diels-Alder (DA) reaction between phosphoryl dithioester and furan using double-ended diethoxyphosphoryl dithiocarbonate (BDEPDF) for RAFT reagent-mediated styrene (St) polymerization, with a double-ended dienophile linker and copolymer of furfuryl methacrylate (FMA) and St as the dienophile. Subsequently, the microgel system was constructed by the HDA reaction between phosphoryl disulfide and furan groups using the copolymer of polyethylene glycol monomethyl ether acrylate (OEGMA) and FMA as the dienophore building block and hydrophilic segment and the polystyrene pro-dienophile linker as the cross-linker and hydrophobic segment. The number of furans in the dienophile chain and the length of the dienophile linker were regulated by RAFT polymerization to investigate the effects of the single-molecule chain functional group degree, furan/dithioester ratio, and hydrophobic cross-linker length on the microgel system. The prepared microgels can achieve the reversible transformation of materials under force responsiveness, and their preparation steps are simple and adaptive to various potential applications in biomedical materials and adaptive electrical materials.

Association between the severity of metabolic dysfunction-associated fatty liver disease and the risk of colorectal neoplasm: a systematic review and meta-analysis.

BACKGROUND: The severity of metabolic dysfunction-associated fatty liver disease (MAFLD) reportedly plays a part in the etiology of colorectal tumors. However, there is no consensus. METHODS: Studies relevant with the impact of MAFLD severity on the risk of colorectal neoplasms published before 24th April 2022 were screened. The pooled odds ratio (OR) with corresponding 95% confidence intervals (95% CI) was obtained using standard and cumulative meta-analyses. Subgroup, meta-regression, and sensitivity analyses were carried out to identify heterogeneity. RESULTS: Fourteen studies with data from 37,824 MAFLD patients were included. The prevalence of colorectal neoplasms escalated with the progression of MAFLD compared to simple steatosis (OR = 1.93; 95% CI = 1.42-2.62). The magnitude and direction of the effect on these outcomes remained largely constant over time. Even after limiting the meta-analysis to 8 studies with available adjusted OR (aOR), the findings still suggested that MAFLD severity was positively related to colorectal neoplasms (aOR = 3.03; 95% CI = 2.02-4.53). Severe MAFLD was more likely to cause left colon tumors (OR = 3.86, 95% CI = 2.16-6.91) than right colon neoplasms (OR = 1.94, 95% CI = 1.15-3.28). CONCLUSION: The severity of MAFLD was independently related to colorectal neoplasms and severe MAFLD was more likely to cause left colon tumors.

Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides.

2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short-wavelength infrared or even long-wavelength infrared detection. Utilizing extrinsic photoconduction to extend the detection waveband of 2D layered photodetectors is attractive and desirable. However, extrinsic photoconduction has yet not been observed in 2D layered materials. Here, extrinsic photoconduction-induced short-wavelength infrared photodetectors based on Ge-based chalcogenides are reported for the first time and the effectiveness of intrinsic point defects are demonstrated. The detection waveband of room-temperature extrinsic GeSe photodetectors with the assistance of Ge vacancies is broadened to 1.6 µm. Extrinsic GeSe photodetectors have an excellent external quantum efficiency (0.5%) at the communication band of 1.31 µm and polarization-resolved capability to subwaveband radiation. Moreover, room-temperature extrinsic GeS photodetectors with a detection waveband to the communication band of 1.55 µm further verify the versatility of intrinsic point defects. This approach provides design strategies to enrich the functionalities of 2D layered photodetectors.

Dynamical Symmetry-Reduction-Induced Giant Anharmonicity in IV-VI Compounds: Role of Cation Lone-Pair s Electrons.

The low thermal conductivity of group IV-VI semiconductors is often attributed to the soft phonons and giant anharmonicity observed in these materials. However, there is still no broad consensus on the fundamental origin of this giant anharmonic effect. Utilizing first-principles calculations and group symmetry analysis, we find that the cation lone-pairs s electrons in IV-VI materials cause a significant coupling between occupied cation s orbitals and unoccupied cation p orbitals due to the symmetry reduction when atoms vibrate away from their equilibrium positions under heating. This leads to an electronic energy gain, consequently flattening the potential energy surface and causing soft phonons and strong anharmonic effects. Our findings provide an intrinsic understanding of the low thermal conductivity in IV-VI compounds by connecting the anharmonicity with the dynamical electronic structures, and can also be extended to a large family of hybrid systems with lone-pair electrons, for promising thermoelectric applications and predictive designs.

Re-imagining the daniell cell: ampere-hour-level rechargeable Zn-Cu batteries.

The Daniell cell (Cu vs. Zn), was invented almost two centuries ago, but has been set aside due to its non-rechargeable nature and limited energy density. However, these cells are exceptionally sustainable because they do not require rare earth elements, are aqueous and easy to recycle. This work addresses key challenges in making Daniell cells relevant to our current energy crisis. First, we propose new approaches to stabilise Zn and Cu plating and stripping processes and create a rechargeable cell. Second, we replace salt bridges with an anion exchange membrane, or a bipolar membrane for alkaline-acid hybrid Zn-Cu batteries operating at 1.56 V. Finally, we apply these changes in pouch cells in order to increase energy and power density. These combined developments result in a rechargeable Daniell cell, which can achieve high areal capacities of 5 mA h cm-2 and can easily be implemented in 1 A h pouch cells.

DNA Methylation: An Important Biomarker and Therapeutic Target for Gastric Cancer.

Gastric cancer (GC) is a very common malignancy with a poor prognosis, and its occurrence and development are closely related to epigenetic modifications. Methylation of DNA before or during gastric cancer is an interesting research topic. This article reviews the studies on DNA methylation related to the cause, diagnosis, treatment, and prognosis of gastric cancer and aims to find cancer biomarkers to solve major human health problems.

Design Principles of p-Type Transparent Conductive Materials.

Transparent conductive materials (TCMs) has always been playing a significant role in electronic and photovoltaic area, due to its prominent optical and electronic properties. To render those transparent materials highly conductive, efficient n- and p- type doping is critically needed to obtain high concentration of free electron and hole carriers. Despite extensive research over the past five decades, high-quality p-type doping of wide-band-gap transparent materials remains a challenge. Here, we summarize four proposed design principles to enhance the p-type conductivity of these wide band gap materials, including (i) reducing the formation energy of the acceptors to enhance the dopant concentration; (ii) lowering the ionization energy and, hence, increasing the ionization of the acceptors to increase the concentration of the free holes; (iii) increasing the VBM of the host material to approaching the pinned Fermi level; and (iv) suppressing the compensating donors to shifting the pinning Fermi level toward the VBM. For each mechanism, we discuss in detail its underlying physics and provided some examples to illustrate the design principles. From this review, one could learn the doping principles and have a strategic mind when designing other p-type materials.

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents. In the O-rich condition, an O8 interface (eight oxygen atoms at the interface, corresponding to 100% oxygen concentration) displays the most stability. By reducing the interfacial O concentration from 100 to 25%, we find that the interface formation energy increases; when sublayer oxygen vacancies exist, the interface becomes even less stable compared with O8. The band offset is also observed to be highly dependent on the interfacial oxygen concentration. Further analysis of the electronic structure shows that no interface states are present at the O8 interface. These findings indicate that the O8 interface serves as a promising candidate for high quality III-V MOS devices. Moreover, interfacial states are present when such interfacial oxygen is partially removed. The interface states, leading to Fermi level pinning, originate from unsaturated interfacial Ga atoms.