Epitaxy of GaN Nanowires on Graphene.

Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures.

Chiral domain walls of Mn3Sn and their memory.

Magnetic domain walls are topological solitons whose internal structure is set by competing energies which sculpt them. In common ferromagnets, domain walls are known to be of either Bloch or Néel types. Little is established in the case of Mn3Sn, a triangular antiferromagnet with a large room-temperature anomalous Hall effect, where domain nucleation is triggered by a well-defined threshold magnetic field. Here, we show that the domain walls of this system generate an additional contribution to the Hall conductivity tensor and a transverse magnetization. The former is an electric field lying in the same plane with the magnetic field and electric current and therefore a planar Hall effect. We demonstrate that in-plane rotation of spins inside the domain wall would explain both observations and the clockwise or anticlockwise chirality of the walls depends on the history of the field orientation and can be controlled.