RESUMEN
We report on an approach to ultraviolet (UV) photolithography and direct writing where both the exposure pattern and dose are determined by a complementary metal oxide semiconductor (CMOS) controlled micro-pixellated light emitting diode array. The 370 nm UV light from a demonstrator 8 x 8 gallium nitride micro-pixel LED is projected onto photoresist covered substrates using two back-to-back microscope objectives, allowing controlled demagnification. In the present setup, the system is capable of delivering up to 8.8 W/cm2 per imaged pixel in circular spots of diameter approximately 8 microm. We show example structures written in positive as well as in negative photoresist.
Asunto(s)
Iluminación/instrumentación , Materiales Manufacturados/efectos de la radiación , Fotoquímica/instrumentación , Fotograbar/instrumentación , Semiconductores , Diseño Asistido por Computadora , Diseño de Equipo , Análisis de Falla de Equipo , Miniaturización , Rayos UltravioletaRESUMEN
We report on the integration of monodisperse semiconductor nanocrystal (NC) color converters onto gallium nitride ultraviolet micro-pixelated light-emitting diodes ('micro-LEDs'). Integration is achieved in a 'self-aligned' process by forming a nanocomposite of the respective NCs in a photocurable epoxy polymer. Blue, green, yellow and red NC/epoxy blend microstructures have been successfully integrated onto micro-pixelated LEDs by this technique and utilised for color conversion, resulting in a five color emission single chip. Optical output power density of up to about 166 mW/cm2 is measured; spectral emission at 609 nm gives an estimated optical-to-optical conversion as high as 18.2% at 30 mA driving current.