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Phys Rev Lett
; 85(7): 1552-5, 2000 Aug 14.
Artículo
en Inglés
| MEDLINE
| ID: mdl-10970552
RESUMEN
We report a strongly nonlinear pressure dependence of the band gaps and large downward shifts of the conduction band edges as functions of composition in ZnS xTe (1-x) and ZnSe (y)Te (1-y) alloys. The dependencies are explained by an interaction between localized A1 symmetry states of S or Se atoms and the extended states of the ZnTe matrix. These results, combined with previous studies of III-N-V materials define a new, broad class of semiconductor alloys in which the introduction of highly electronegative atoms leads to dramatic modifications of the conduction band structure. The modifications are well described by the recently introduced band anticrossing model.
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Phys Rev B Condens Matter
; 38(14): 9857-9869, 1988 Nov 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-9945808
18.
Phys Rev B Condens Matter
; 36(17): 9374-9377, 1987 Dec 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-9942824
19.
Phys Rev B Condens Matter
; 36(17): 9392-9394, 1987 Dec 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-9942829
20.
Phys Rev B Condens Matter
; 38(9): 6316-6317, 1988 Sep 15.
Artículo
en Inglés
| MEDLINE
| ID: mdl-9947100