RESUMEN
In this work, the success of doping Na into Cu2O thin films by reactive DC magnetron sputtering method at low temperature is described for the first time. The characteristics of crystal structure, morphology, optical, electrical properties and binding of elements in Cu2O:Na thin films are carefully investigated. The Cu2O:Na thin films have exhibited high electronic conductivity as p-type semiconductor and absorption in visible range. The highest hole concentration on the order of 1018 cm-3 and the lowest resistivity of 6.726 Ω · cm according to 6.56% Na impurities in Cu2O:Na lattice are also detected. The role of Na impurity in Cu2O structure is proposed that based on the changing of structure and alignment of elements.
RESUMEN
The p-Cu2O/i-ZnO nanorods/n-IGZO heterojunctions were fabricated by electrochemical and sputtering method. ZnO nanorods were grown on conductive indium gallium zinc oxide (IGZO) thin film and then p-Cu2O layer was deposited on ZnO nanorods to form the heterojunction. ZnO nanorods play an important role in carrier transport mechanisms and performance of the junction. The changing of defects in ZnO nanorods by annealing samples in air and vacuum have studied. The XRD, photoluminescence (PL) spectroscopy, and FTIR were used to study about structure, and defects in ZnO nanorods. The SEM, iV characteristics methods were also used to define structure, electrical properties of the heterojunctions layers. The results show that the defects in ZnO nanorods affected remarkably on performance of heterojunctions of solar cells.
RESUMEN
In this work, we propose simple and inexpensive methods to prepare micro/nano hierarchical Surface-Enhanced Raman Scattering (SERS) substrates, in which pyramid structure is created by using anisotropic wet etching of a silicon wafer and a silver thin film is deposited on these pyramid arrays by thermal evaporation. The ensemble is then annealed at 450 °C for 2 hours to form silver nanoparticles (AgNPs). The sizes and density of the pyramids and AgNPs are optimized mainly by changing the etching temperature (60-80 °C), the thickness of the Ag-film (15-45 nm) and etching time (3-10 min). The ultraviolet visible (UV-Vis) absorbance spectra show that the AgNPs formed with the 30 nm-thick film exhibit the strongest plasmonic effect. Under these conditions, the spherical AgNPs with sizes of 42-48 nm are densely distributed on the silicon micro-pyramid array. The obtained SERS signal is the strongest at the pyramid base-edge size of 7-10 µm. The enhancement factor obtained from the abamectin probe molecules is as high as 1 × 106 and the SERS substrates enable the detection of abamectin concentrations as low as 5.7 × 10-9 M. Therefore, this work provides a novel SERS substrate structure that has a high potential for use in medicine and biotechnology or as a food security sensor.
RESUMEN
In this study, two layers: i-ZnO nanorods and p-Cu2O were fabricated by electrochemical deposition. The fabricating process was the initial formation of ZnO nanorods layer on the n-IGZO thin film which was prepared by sputtering method, then a p-Cu2O layer was deposited on top of rods to form the p-Cu2O/i-ZnO nanorods/n-ZnO heterojunction. The XRD, SEM, UV-VIS, I-V characteristics methods were used to define structure, optical and electrical properties of these heterojunction layers. The fabricating conditions and thickness of the Cu2O layers significantly affected to the formation, microstructure, electrical and optical properties of the junction. The length of i-ZnO nanorods layer in the structure of the heterojunction has strongly affected to the carriers transport mechanism and performance of this heterojunction.